Solar-blind photodetectors based on Ga2O3 and III-nitrides

Ryan P McClintock; Alexander Jaud; Lakshay Gautam; Manijeh Razeghi

doi:10.1117/12.2549606

Solar-blind photodetectors based on Ga₂O₃ and III-nitrides

Ryan P McClintock, Alexander Jaud, Lakshay Gautam, Manijeh Razeghi^*

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Recently, there has been a surge of interest in the wide bandgap semiconductors for solar blind photo detectors (SBPD). This work presents our recent progress in the growth/doping of AlGaN and Ga₂O₃ thin films for solar blind detection applications. Both of these thin films grown are grown by metal organic chemical vapor deposition (MOCVD) in the same Aixtron MOCVD system. Solar-blind metal-semiconductor-metal photodetectors were fabricated with Ga₂O₃. Spectral responsivity studies of the MSM photodetectors revealed a peak at 261 nm and a maximum EQE of 41.7% for a -2.5 V bias. We have also demonstrated AlGaN based solar-blind avalanche photodiodes with a gain in excess of 57,000 at ∼100 volts of reverse bias. This gain can be attributed to avalanche multiplication of the photogenerated carriers within the device. Both of these devices show the potential of wide bandgap semiconductors for solar blind photo detectors.

Original language	English (US)
Title of host publication	Quantum Sensing and Nano Electronics and Photonics XVII
Editors	Manijeh Razeghi, Jay S. Lewis, Giti A. Khodaparast, Pedram Khalili
Publisher	SPIE
ISBN (Electronic)	9781510633391
DOIs	https://doi.org/10.1117/12.2549606
State	Published - 2020
Event	Quantum Sensing and Nano Electronics and Photonics XVII 2020 - San Francisco, United States Duration: Feb 2 2020 → Feb 6 2020

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11288
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Quantum Sensing and Nano Electronics and Photonics XVII 2020
Country/Territory	United States
City	San Francisco
Period	2/2/20 → 2/6/20

Keywords

AlGaN
Avalanche Photodetectors
GaO
Solar blind photo detectors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2549606

Cite this

McClintock, R. P., Jaud, A., Gautam, L., & Razeghi, M. (2020). Solar-blind photodetectors based on Ga₂O₃ and III-nitrides. In M. Razeghi, J. S. Lewis, G. A. Khodaparast, & P. Khalili (Eds.), Quantum Sensing and Nano Electronics and Photonics XVII Article 1128803 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11288). SPIE. https://doi.org/10.1117/12.2549606

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title = "Solar-blind photodetectors based on Ga2O3 and III-nitrides",

abstract = "Recently, there has been a surge of interest in the wide bandgap semiconductors for solar blind photo detectors (SBPD). This work presents our recent progress in the growth/doping of AlGaN and Ga2O3 thin films for solar blind detection applications. Both of these thin films grown are grown by metal organic chemical vapor deposition (MOCVD) in the same Aixtron MOCVD system. Solar-blind metal-semiconductor-metal photodetectors were fabricated with Ga2O3. Spectral responsivity studies of the MSM photodetectors revealed a peak at 261 nm and a maximum EQE of 41.7% for a -2.5 V bias. We have also demonstrated AlGaN based solar-blind avalanche photodiodes with a gain in excess of 57,000 at ∼100 volts of reverse bias. This gain can be attributed to avalanche multiplication of the photogenerated carriers within the device. Both of these devices show the potential of wide bandgap semiconductors for solar blind photo detectors.",

keywords = "AlGaN, Avalanche Photodetectors, GaO, Solar blind photo detectors",

author = "McClintock, {Ryan P} and Alexander Jaud and Lakshay Gautam and Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} 2020 SPIE.; Quantum Sensing and Nano Electronics and Photonics XVII 2020 ; Conference date: 02-02-2020 Through 06-02-2020",

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doi = "10.1117/12.2549606",

language = "English (US)",

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McClintock, RP, Jaud, A, Gautam, L & Razeghi, M 2020, Solar-blind photodetectors based on Ga₂O₃ and III-nitrides. in M Razeghi, JS Lewis, GA Khodaparast & P Khalili (eds), Quantum Sensing and Nano Electronics and Photonics XVII., 1128803, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11288, SPIE, Quantum Sensing and Nano Electronics and Photonics XVII 2020, San Francisco, United States, 2/2/20. https://doi.org/10.1117/12.2549606

Solar-blind photodetectors based on Ga₂O₃ and III-nitrides. / McClintock, Ryan P; Jaud, Alexander; Gautam, Lakshay et al.
Quantum Sensing and Nano Electronics and Photonics XVII. ed. / Manijeh Razeghi; Jay S. Lewis; Giti A. Khodaparast; Pedram Khalili. SPIE, 2020. 1128803 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11288).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Recently, there has been a surge of interest in the wide bandgap semiconductors for solar blind photo detectors (SBPD). This work presents our recent progress in the growth/doping of AlGaN and Ga2O3 thin films for solar blind detection applications. Both of these thin films grown are grown by metal organic chemical vapor deposition (MOCVD) in the same Aixtron MOCVD system. Solar-blind metal-semiconductor-metal photodetectors were fabricated with Ga2O3. Spectral responsivity studies of the MSM photodetectors revealed a peak at 261 nm and a maximum EQE of 41.7% for a -2.5 V bias. We have also demonstrated AlGaN based solar-blind avalanche photodiodes with a gain in excess of 57,000 at ∼100 volts of reverse bias. This gain can be attributed to avalanche multiplication of the photogenerated carriers within the device. Both of these devices show the potential of wide bandgap semiconductors for solar blind photo detectors.

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