Abstract
New inorganic ligands including halide anions have significantly accelerated progress in colloidal quantum dot (CQD) photovoltaics in recent years. All such device reports to date have relied on halide treatment during solid-state ligand exchanges or on co-treatment of long-aliphatic-ligand-capped nanoparticles in the solution phase. Here we report solar cells based on a colloidal quantum dot ink that is capped using halide-based ligands alone. By judicious choice of solvents and ligands, we developed a CQD ink from which a homogeneous and thick colloidal quantum dot solid is applied in a single step. The resultant films display an n-type character, making it suitable as a key component in a solar-converting device. We demonstrate two types of quantum junction devices that exploit these iodide-ligand-based inks. We achieve solar power conversion efficiencies of 6% using this class of colloids.
Original language | English (US) |
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Pages (from-to) | 10321-10327 |
Number of pages | 7 |
Journal | ACS nano |
Volume | 8 |
Issue number | 10 |
DOIs | |
State | Published - Oct 28 2014 |
Keywords
- halide ligands
- n-type
- nanocrystals
- photodiode
- solar cells
ASJC Scopus subject areas
- General Materials Science
- General Engineering
- General Physics and Astronomy