Solid-liquid interface slip as a rate process

A. Martini; Seth H Lichter; Randall Q Snurr; Q Jane Wang

doi:10.1115/IJTC2007-44022

Solid-liquid interface slip as a rate process

A. Martini^*, Seth H Lichter, Randall Q Snurr, Q Jane Wang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thin film lubrication may be significantly affected by slip at the solid-liquid interface. Slip occurs when there is a jump in the mean speed between the walls and the first layer of liquid molecules. Using molecular simulation, we show that the amount of slip is greatly affected by solvation pressure and that this dependence can be accounted for by treating slip as a rate process. This treatment enables formulation of a quantitative relationship between solvation pressure and interface slip.

Original language	English (US)
Title of host publication	2007 Proceedings of the ASME/STLE International Joint Tribology Conference, IJTC 2007
Pages	773-774
Number of pages	2
Volume	PART B
DOIs	https://doi.org/10.1115/IJTC2007-44022
State	Published - May 19 2008
Event	2007 ASME/STLE International Joint Tribology Conference, IJTC 2007 - San Diego, CA, United States Duration: Oct 22 2007 → Oct 24 2007

Other

Other	2007 ASME/STLE International Joint Tribology Conference, IJTC 2007
Country	United States
City	San Diego, CA
Period	10/22/07 → 10/24/07

ASJC Scopus subject areas

Mechanical Engineering
Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces

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title = "Solid-liquid interface slip as a rate process",

abstract = "Thin film lubrication may be significantly affected by slip at the solid-liquid interface. Slip occurs when there is a jump in the mean speed between the walls and the first layer of liquid molecules. Using molecular simulation, we show that the amount of slip is greatly affected by solvation pressure and that this dependence can be accounted for by treating slip as a rate process. This treatment enables formulation of a quantitative relationship between solvation pressure and interface slip.",

author = "A. Martini and Lichter, {Seth H} and Snurr, {Randall Q} and Wang, {Q Jane}",

year = "2008",

month = may,

day = "19",

doi = "10.1115/IJTC2007-44022",

language = "English (US)",

isbn = "0791848108",

volume = "PART B",

pages = "773--774",

booktitle = "2007 Proceedings of the ASME/STLE International Joint Tribology Conference, IJTC 2007",

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T1 - Solid-liquid interface slip as a rate process

AU - Martini, A.

AU - Lichter, Seth H

AU - Snurr, Randall Q

AU - Wang, Q Jane

PY - 2008/5/19

Y1 - 2008/5/19

N2 - Thin film lubrication may be significantly affected by slip at the solid-liquid interface. Slip occurs when there is a jump in the mean speed between the walls and the first layer of liquid molecules. Using molecular simulation, we show that the amount of slip is greatly affected by solvation pressure and that this dependence can be accounted for by treating slip as a rate process. This treatment enables formulation of a quantitative relationship between solvation pressure and interface slip.

AB - Thin film lubrication may be significantly affected by slip at the solid-liquid interface. Slip occurs when there is a jump in the mean speed between the walls and the first layer of liquid molecules. Using molecular simulation, we show that the amount of slip is greatly affected by solvation pressure and that this dependence can be accounted for by treating slip as a rate process. This treatment enables formulation of a quantitative relationship between solvation pressure and interface slip.

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U2 - 10.1115/IJTC2007-44022

DO - 10.1115/IJTC2007-44022

M3 - Conference contribution

AN - SCOPUS:43449089811

SN - 0791848108

SN - 9780791848104

VL - PART B

SP - 773

EP - 774

BT - 2007 Proceedings of the ASME/STLE International Joint Tribology Conference, IJTC 2007

T2 - 2007 ASME/STLE International Joint Tribology Conference, IJTC 2007

Y2 - 22 October 2007 through 24 October 2007

ER -

Solid-liquid interface slip as a rate process

Abstract

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