Solid source MBE growth of InAsP/InP quantum wells

Georgiana Dagnall; Jeng Jung Shen; Tong Ho Kim; Robert A. Metzger; April S. Brown; Stuart R. Stock

doi:10.1007/s11664-999-0199-3

Solid source MBE growth of InAsP/InP quantum wells

Georgiana Dagnall, Jeng Jung Shen, Tong Ho Kim, Robert A. Metzger, April S. Brown, Stuart R. Stock

Cell & Developmental Biology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Strained InAsP multiquantum wells (MWQs) were grown on InP(100) substrates by solid source molecular beam epitaxy and were characterized to relate structural and optical quality to growth conditions. The multiquantum wells were grown using either dimer or tetramer arsenic (As₂ or As₄) over the substrate temperature range of 420-535°C. θ-2θ x-ray diffraction measurements showed only slight differences between arsenic compositions in the quantum wells grown with As₂ or As₄. 300K and 8K photoluminescence full width at half max (FWHM) decreased at higher growth temperatures regardless of the arsenic species used. The 8K photoluminescence FWHM and the surface roughness measured by atomic force microscopy are found to be less sensitive to substrate growth temperature for the multiquantum wells growth with As₂ as opposed to As₄.

Original language	English (US)
Pages (from-to)	933-938
Number of pages	6
Journal	Journal of Electronic Materials
Volume	28
Issue number	8
DOIs	https://doi.org/10.1007/s11664-999-0199-3
State	Published - Aug 1999

Funding

Financial support from the National Science Foundation is gratefully acknowledged. The authors also acknowledge the assistance of John Callahan in the

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-999-0199-3

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title = "Solid source MBE growth of InAsP/InP quantum wells",

abstract = "Strained InAsP multiquantum wells (MWQs) were grown on InP(100) substrates by solid source molecular beam epitaxy and were characterized to relate structural and optical quality to growth conditions. The multiquantum wells were grown using either dimer or tetramer arsenic (As2 or As4) over the substrate temperature range of 420-535°C. θ-2θ x-ray diffraction measurements showed only slight differences between arsenic compositions in the quantum wells grown with As2 or As4. 300K and 8K photoluminescence full width at half max (FWHM) decreased at higher growth temperatures regardless of the arsenic species used. The 8K photoluminescence FWHM and the surface roughness measured by atomic force microscopy are found to be less sensitive to substrate growth temperature for the multiquantum wells growth with As2 as opposed to As4.",

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note = "Funding Information: Financial support from the National Science Foundation is gratefully acknowledged. The authors also acknowledge the assistance of John Callahan in the",

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AU - Dagnall, Georgiana

AU - Shen, Jeng Jung

AU - Kim, Tong Ho

AU - Metzger, Robert A.

AU - Brown, April S.

AU - Stock, Stuart R.

N1 - Funding Information: Financial support from the National Science Foundation is gratefully acknowledged. The authors also acknowledge the assistance of John Callahan in the

PY - 1999/8

Y1 - 1999/8

N2 - Strained InAsP multiquantum wells (MWQs) were grown on InP(100) substrates by solid source molecular beam epitaxy and were characterized to relate structural and optical quality to growth conditions. The multiquantum wells were grown using either dimer or tetramer arsenic (As2 or As4) over the substrate temperature range of 420-535°C. θ-2θ x-ray diffraction measurements showed only slight differences between arsenic compositions in the quantum wells grown with As2 or As4. 300K and 8K photoluminescence full width at half max (FWHM) decreased at higher growth temperatures regardless of the arsenic species used. The 8K photoluminescence FWHM and the surface roughness measured by atomic force microscopy are found to be less sensitive to substrate growth temperature for the multiquantum wells growth with As2 as opposed to As4.

AB - Strained InAsP multiquantum wells (MWQs) were grown on InP(100) substrates by solid source molecular beam epitaxy and were characterized to relate structural and optical quality to growth conditions. The multiquantum wells were grown using either dimer or tetramer arsenic (As2 or As4) over the substrate temperature range of 420-535°C. θ-2θ x-ray diffraction measurements showed only slight differences between arsenic compositions in the quantum wells grown with As2 or As4. 300K and 8K photoluminescence full width at half max (FWHM) decreased at higher growth temperatures regardless of the arsenic species used. The 8K photoluminescence FWHM and the surface roughness measured by atomic force microscopy are found to be less sensitive to substrate growth temperature for the multiquantum wells growth with As2 as opposed to As4.

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Solid source MBE growth of InAsP/InP quantum wells

Abstract

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ASJC Scopus subject areas

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