TY - JOUR
T1 - Solid source MBE growth of quantum cascade lasers
AU - Liu, Feng Qi
AU - Li, Lu
AU - Wang, Lijun
AU - Liu, Junqi
AU - Zhang, Wei
AU - Zhang, Quande
AU - Liu, Wanfeng
AU - Lu, Quanyong
AU - Wang, Zhanguo
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009/11
Y1 - 2009/11
N2 - High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.
AB - High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.
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U2 - 10.1007/s00339-009-5423-8
DO - 10.1007/s00339-009-5423-8
M3 - Article
AN - SCOPUS:70450174015
VL - 97
SP - 527
EP - 532
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 3
ER -