Solid source MBE growth of quantum cascade lasers

Feng Qi Liu; Lu Li; Lijun Wang; Junqi Liu; Wei Zhang; Quande Zhang; Wanfeng Liu; Quanyong Lu; Zhanguo Wang

doi:10.1007/s00339-009-5423-8

Solid source MBE growth of quantum cascade lasers

Feng Qi Liu^*, Lu Li, Lijun Wang, Junqi Liu, Wei Zhang, Quande Zhang, Wanfeng Liu, Quanyong Lu, Zhanguo Wang

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.

Original language	English (US)
Pages (from-to)	527-532
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	97
Issue number	3
DOIs	https://doi.org/10.1007/s00339-009-5423-8
State	Published - Nov 2009

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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title = "Solid source MBE growth of quantum cascade lasers",

abstract = "High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.",

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AU - Liu, Feng Qi

AU - Li, Lu

AU - Wang, Lijun

AU - Liu, Junqi

AU - Zhang, Wei

AU - Zhang, Quande

AU - Liu, Wanfeng

AU - Lu, Quanyong

AU - Wang, Zhanguo

PY - 2009/11

Y1 - 2009/11

N2 - High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.

AB - High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

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Solid source MBE growth of quantum cascade lasers

Abstract

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