Solid source MBE growth of quantum cascade lasers

Feng Qi Liu*, Lu Li, Lijun Wang, Junqi Liu, Wei Zhang, Quande Zhang, Wanfeng Liu, Quanyong Lu, Zhanguo Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.

Original languageEnglish (US)
Pages (from-to)527-532
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume97
Issue number3
DOIs
StatePublished - Nov 2009

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Solid source MBE growth of quantum cascade lasers'. Together they form a unique fingerprint.

  • Cite this

    Liu, F. Q., Li, L., Wang, L., Liu, J., Zhang, W., Zhang, Q., Liu, W., Lu, Q., & Wang, Z. (2009). Solid source MBE growth of quantum cascade lasers. Applied Physics A: Materials Science and Processing, 97(3), 527-532. https://doi.org/10.1007/s00339-009-5423-8