Solution-processed ambipolar vertical organic field effect transistor

Ariel J. Ben-Sasson; Zhihua Chen; Antonio Facchetti; Nir Tessler

doi:10.1063/1.4731774

Solution-processed ambipolar vertical organic field effect transistor

Ariel J. Ben-Sasson, Zhihua Chen, Antonio Facchetti, Nir Tessler^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

We report on a solution-processed ambipolar patterned-electrode vertical organic field effect transistor (PE-VOFET) based on the P(NDI2OD-T2) polymer. The Schottky barrier-based VOFET operation uniquely facilitates an ambipolar transport using a single anode-cathode-electrode and a single semiconductor material. Pin-hole free sub-100 nanometer channel length devices are obtained with no high resolution patterning owing to both the polymer's smooth morphology and the underlining patterned-electrode's flatness. The VOFET exhibits n-type on/off ratio >10 ³, current density >50 [mAcm ^-2] under V _DS = 5 V, as well as p-type operation. Prone to design and optimization, the ambipolar PE-VOFET is a promising platform for organic complementary circuit technology.

Original language	English (US)
Article number	263306
Journal	Applied Physics Letters
Volume	100
Issue number	26
DOIs	https://doi.org/10.1063/1.4731774
State	Published - Jun 25 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Solution-processed ambipolar vertical organic field effect transistor",

abstract = "We report on a solution-processed ambipolar patterned-electrode vertical organic field effect transistor (PE-VOFET) based on the P(NDI2OD-T2) polymer. The Schottky barrier-based VOFET operation uniquely facilitates an ambipolar transport using a single anode-cathode-electrode and a single semiconductor material. Pin-hole free sub-100 nanometer channel length devices are obtained with no high resolution patterning owing to both the polymer's smooth morphology and the underlining patterned-electrode's flatness. The VOFET exhibits n-type on/off ratio >10 3, current density >50 [mAcm -2] under V DS = 5 V, as well as p-type operation. Prone to design and optimization, the ambipolar PE-VOFET is a promising platform for organic complementary circuit technology.",

author = "Ben-Sasson, {Ariel J.} and Zhihua Chen and Antonio Facchetti and Nir Tessler",

note = "Funding Information: This research was supported by the Israel Science Foundation (Grant no. 695/10) and the Russell Berrie Nanotechnology Institute at the Technion—Israel Institute of Technology. Ariel J. Ben-Sasson is grateful to the Azrieli Foundation for the award of an Azrieli fellowship.",

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T1 - Solution-processed ambipolar vertical organic field effect transistor

AU - Ben-Sasson, Ariel J.

AU - Chen, Zhihua

AU - Facchetti, Antonio

AU - Tessler, Nir

N1 - Funding Information: This research was supported by the Israel Science Foundation (Grant no. 695/10) and the Russell Berrie Nanotechnology Institute at the Technion—Israel Institute of Technology. Ariel J. Ben-Sasson is grateful to the Azrieli Foundation for the award of an Azrieli fellowship.

PY - 2012/6/25

Y1 - 2012/6/25

N2 - We report on a solution-processed ambipolar patterned-electrode vertical organic field effect transistor (PE-VOFET) based on the P(NDI2OD-T2) polymer. The Schottky barrier-based VOFET operation uniquely facilitates an ambipolar transport using a single anode-cathode-electrode and a single semiconductor material. Pin-hole free sub-100 nanometer channel length devices are obtained with no high resolution patterning owing to both the polymer's smooth morphology and the underlining patterned-electrode's flatness. The VOFET exhibits n-type on/off ratio >10 3, current density >50 [mAcm -2] under V DS = 5 V, as well as p-type operation. Prone to design and optimization, the ambipolar PE-VOFET is a promising platform for organic complementary circuit technology.

AB - We report on a solution-processed ambipolar patterned-electrode vertical organic field effect transistor (PE-VOFET) based on the P(NDI2OD-T2) polymer. The Schottky barrier-based VOFET operation uniquely facilitates an ambipolar transport using a single anode-cathode-electrode and a single semiconductor material. Pin-hole free sub-100 nanometer channel length devices are obtained with no high resolution patterning owing to both the polymer's smooth morphology and the underlining patterned-electrode's flatness. The VOFET exhibits n-type on/off ratio >10 3, current density >50 [mAcm -2] under V DS = 5 V, as well as p-type operation. Prone to design and optimization, the ambipolar PE-VOFET is a promising platform for organic complementary circuit technology.

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Solution-processed ambipolar vertical organic field effect transistor

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