Solution-processed crystalline n-type organic transistors stable against electrical stress and photooxidation

The field of organic electronics is still lacking ubiquitous organic transistors with an efficient electron (n-type) transport that are environmentally and electrically robust. Here, solution-processed n-type N,N′-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide organic field-effect transistors (OFETs) are reported and it is demonstrated that they are highly stable while operating both in vacuum and in the air at least up to temperatures as high as ≈100 °C. In addition, these crystalline thin-film transistors are found to be resilient to photooxidation under intense illumination in oxygen atmosphere. The performance of these environmentally stable n-type OFETs is on par with the commercial amorphous Si transistors: the highest electron mobility obtained in this study is μ_max ≈ 0.6 cm² V^-1 s^-1, while the average reproducible mobility is 〈μ〉 = 0.4 cm² V^-1 s^-1. Importantly, no parasitic gate voltage V_G sweep rate dependence of the nominal mobility in these devices is observed. In addition, the charge carrier mobility has been found to be temperature independent in the range T ≈ 250-373 K. The observed great operational stability and resilience against photooxidation, as well as a temperature-independent mobility in these solution-processed n-type OFETs are beneficial for furthering practical applications of organic semiconductor devices. n-type organic field-effect transistors based on highly crystalline oriented N,N′-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide films grown from a solution are shown to have an excellent environmental and electrical stability, resistance to photooxidation, and the ability to withstand temperature cycling in a wide temperature range. The charge carrier mobility is found to be temperature independent in the practically relevant range between -25 and 100 °C.