Solution-processed self-assembled nanodielectrics on template-stripped metal substrates

Julian J. McMorrow, Amanda R. Walker, Vinod K. Sangwan, Deep Jariwala, Emily Hoffman, Ken Everaerts, Antonio Facchetti*, Mark C. Hersam, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-capacitance systems are often convoluted with the electronic response of the semiconducting silicon substrate. In this report, we demonstrate the growth of solution-processed zirconia self-assembled nanodielectrics (Zr-SAND) on template-stripped aluminum substrates. The resulting Zr-SAND on Al structures leverage the ultrasmooth (r.m.s. roughness <0.4 nm), chemically uniform nature of template-stripped metal substrates to demonstrate the same exceptional electronic uniformity (capacitance ∼700 nF cm-2, leakage current <1 μA cm-2 at -2 MV cm-1) and multilayer growth of Zr-SAND on Si, while exhibiting superior temperature and voltage capacitance responses. These results are important to conduct detailed transport measurements in emergent transistor technologies featuring SAND as well as for future applications in integrated circuits or flexible electronics.

Original languageEnglish (US)
Pages (from-to)26360-26366
Number of pages7
JournalACS Applied Materials and Interfaces
Volume7
Issue number48
DOIs
StatePublished - Dec 9 2015

Keywords

  • capacitor
  • nanodielectric
  • self-assembly
  • template strip
  • unconventional electronics

ASJC Scopus subject areas

  • Materials Science(all)

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