Abstract
A study was conducted to prepare bottom-gate top-bottom contact n-TFT (thin-film transistors) structures by using N,N'-bis(n-octyl)-(1,7&1,6)- dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2). The study used PDI8-CN2 as n-channel semiconductor and solution-processed gate dielectrics. The study provide a method to prepare bottom-gate TFTs on Au(gate)-PET (polyethylene-terephthalate) substrates with thick spin-coated polymeric dielectric film. It was observed during the study that the spin-coated semiconductor films are more smoother and has reproducible TFT characteristics. The study achieved top-gate n-TFTs by using a soluble small molecule semiconductors with solution-processed top gate dielectrics.
Original language | English (US) |
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Pages (from-to) | 3393-3398 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 20 |
Issue number | 18 |
DOIs | |
State | Published - Sep 17 2008 |
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering