Solution processed top-gate n-channel transistors and complementary circuits on plastics operating in ambient conditions

He Yan*, Yan Zheng, Robert Blache, Christopher Newman, Shaofeng Lu, Jasmin Woerle, Antonio Facchetti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

122 Scopus citations

Abstract

A study was conducted to prepare bottom-gate top-bottom contact n-TFT (thin-film transistors) structures by using N,N'-bis(n-octyl)-(1,7&1,6)- dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2). The study used PDI8-CN2 as n-channel semiconductor and solution-processed gate dielectrics. The study provide a method to prepare bottom-gate TFTs on Au(gate)-PET (polyethylene-terephthalate) substrates with thick spin-coated polymeric dielectric film. It was observed during the study that the spin-coated semiconductor films are more smoother and has reproducible TFT characteristics. The study achieved top-gate n-TFTs by using a soluble small molecule semiconductors with solution-processed top gate dielectrics.

Original languageEnglish (US)
Pages (from-to)3393-3398
Number of pages6
JournalAdvanced Materials
Volume20
Issue number18
DOIs
StatePublished - Sep 17 2008

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Solution processed top-gate n-channel transistors and complementary circuits on plastics operating in ambient conditions'. Together they form a unique fingerprint.

Cite this