The I-V characteriistics of the double tunnel junction Sn-I-Sn-Pb, a component of the multilayer tunnel structure Pb-I-Pb-I-Sn-I-Sn-I-Pb, were measured both under and without the influence of phonons produced in the generator junction (Pb-I-Pb). It is found that the summary I-V curves display features at voltages (ΔPb-ΔSn) e, 2ΔSn e, and (ΔSn+ΔPb) e, showing that the mechanism of tunneling in vertically stacked junctions can differ from that in the usual series junction array.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering