Some features of I-V curves of vertically stacked tunnel junctions

I. P. Nevirkovets

doi:10.1016/0921-4526(92)90606-S

Some features of I-V curves of vertically stacked tunnel junctions

I. P. Nevirkovets^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The I-V characteriistics of the double tunnel junction Sn-I-Sn-Pb, a component of the multilayer tunnel structure Pb-I-Pb-I-Sn-I-Sn-I-Pb, were measured both under and without the influence of phonons produced in the generator junction (Pb-I-Pb). It is found that the summary I-V curves display features at voltages (Δ_Pb-Δ_Sn) e, 2Δ_Sn e, and (Δ_Sn+Δ_Pb) e, showing that the mechanism of tunneling in vertically stacked junctions can differ from that in the usual series junction array.

Original language	English (US)
Pages (from-to)	148-150
Number of pages	3
Journal	Physica B: Physics of Condensed Matter
Volume	176
Issue number	1-2
DOIs	https://doi.org/10.1016/0921-4526(92)90606-S
State	Published - Jan 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/0921-4526(92)90606-S

Cite this

@article{b7c1b9fec1924f81a8b9214c577ec168,

title = "Some features of I-V curves of vertically stacked tunnel junctions",

abstract = "The I-V characteriistics of the double tunnel junction Sn-I-Sn-Pb, a component of the multilayer tunnel structure Pb-I-Pb-I-Sn-I-Sn-I-Pb, were measured both under and without the influence of phonons produced in the generator junction (Pb-I-Pb). It is found that the summary I-V curves display features at voltages (ΔPb-ΔSn) e, 2ΔSn e, and (ΔSn+ΔPb) e, showing that the mechanism of tunneling in vertically stacked junctions can differ from that in the usual series junction array.",

author = "Nevirkovets, {I. P.}",

year = "1992",

month = jan,

doi = "10.1016/0921-4526(92)90606-S",

language = "English (US)",

volume = "176",

pages = "148--150",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Some features of I-V curves of vertically stacked tunnel junctions

AU - Nevirkovets, I. P.

PY - 1992/1

Y1 - 1992/1

N2 - The I-V characteriistics of the double tunnel junction Sn-I-Sn-Pb, a component of the multilayer tunnel structure Pb-I-Pb-I-Sn-I-Sn-I-Pb, were measured both under and without the influence of phonons produced in the generator junction (Pb-I-Pb). It is found that the summary I-V curves display features at voltages (ΔPb-ΔSn) e, 2ΔSn e, and (ΔSn+ΔPb) e, showing that the mechanism of tunneling in vertically stacked junctions can differ from that in the usual series junction array.

AB - The I-V characteriistics of the double tunnel junction Sn-I-Sn-Pb, a component of the multilayer tunnel structure Pb-I-Pb-I-Sn-I-Sn-I-Pb, were measured both under and without the influence of phonons produced in the generator junction (Pb-I-Pb). It is found that the summary I-V curves display features at voltages (ΔPb-ΔSn) e, 2ΔSn e, and (ΔSn+ΔPb) e, showing that the mechanism of tunneling in vertically stacked junctions can differ from that in the usual series junction array.

UR - http://www.scopus.com/inward/record.url?scp=0026737027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026737027&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(92)90606-S

DO - 10.1016/0921-4526(92)90606-S

M3 - Article

AN - SCOPUS:0026737027

SN - 0921-4526

VL - 176

SP - 148

EP - 150

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-2

ER -

Some features of I-V curves of vertically stacked tunnel junctions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this