Some features of I-V curves of vertically stacked tunnel junctions

I. P. Nevirkovets

doi:10.1016/0921-4526(92)90606-S

Some features of I-V curves of vertically stacked tunnel junctions

I. P. Nevirkovets^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The I-V characteriistics of the double tunnel junction Sn-I-Sn-Pb, a component of the multilayer tunnel structure Pb-I-Pb-I-Sn-I-Sn-I-Pb, were measured both under and without the influence of phonons produced in the generator junction (Pb-I-Pb). It is found that the summary I-V curves display features at voltages (Δ_Pb-Δ_Sn) e, 2Δ_Sn e, and (Δ_Sn+Δ_Pb) e, showing that the mechanism of tunneling in vertically stacked junctions can differ from that in the usual series junction array.

Original language	English (US)
Pages (from-to)	148-150
Number of pages	3
Journal	Physica B: Physics of Condensed Matter
Volume	176
Issue number	1-2
DOIs	https://doi.org/10.1016/0921-4526(92)90606-S
State	Published - Jan 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0921-4526(92)90606-S

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abstract = "The I-V characteriistics of the double tunnel junction Sn-I-Sn-Pb, a component of the multilayer tunnel structure Pb-I-Pb-I-Sn-I-Sn-I-Pb, were measured both under and without the influence of phonons produced in the generator junction (Pb-I-Pb). It is found that the summary I-V curves display features at voltages (ΔPb-ΔSn) e, 2ΔSn e, and (ΔSn+ΔPb) e, showing that the mechanism of tunneling in vertically stacked junctions can differ from that in the usual series junction array.",

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AB - The I-V characteriistics of the double tunnel junction Sn-I-Sn-Pb, a component of the multilayer tunnel structure Pb-I-Pb-I-Sn-I-Sn-I-Pb, were measured both under and without the influence of phonons produced in the generator junction (Pb-I-Pb). It is found that the summary I-V curves display features at voltages (ΔPb-ΔSn) e, 2ΔSn e, and (ΔSn+ΔPb) e, showing that the mechanism of tunneling in vertically stacked junctions can differ from that in the usual series junction array.

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Some features of I-V curves of vertically stacked tunnel junctions

Abstract

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