Some features of I-V curves of vertically stacked tunnel junctions

I. P. Nevirkovets*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The I-V characteriistics of the double tunnel junction Sn-I-Sn-Pb, a component of the multilayer tunnel structure Pb-I-Pb-I-Sn-I-Sn-I-Pb, were measured both under and without the influence of phonons produced in the generator junction (Pb-I-Pb). It is found that the summary I-V curves display features at voltages (ΔPbSn) e, 2ΔSn e, and (ΔSnPb) e, showing that the mechanism of tunneling in vertically stacked junctions can differ from that in the usual series junction array.

Original languageEnglish (US)
Pages (from-to)148-150
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume176
Issue number1-2
DOIs
StatePublished - Jan 1992
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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