Some properties of Re2Te5-based materials

T. Caillat*, S. Chung, J. P. Fleurial, G. J. Snyder, A. Borshchevsky

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Re2Te5 is a semiconducting compound with an energy band gap of about 0.8 eV. It has a relatively complex crystal structure with 84 atoms per unit cell. Initial results obtained at the Jet Propulsion Laboratory on p-type polycrystalline samples showed that they possess large Seebeck coefficient values but also large electrical resistivity values. They also exhibit very low thermal conductivity with a room temperature value of 13 mW/cmK. Another attractive feature of Re2Te5 is the possibility of inserting a variety of atoms in the large voids (2.8 angstroms in diameter) of the crystal structure to form Re6M2Te15 filled compositions. The void fillers could act as phonon scattering centers, further reducing the thermal conductivity in these materials. As part of an effort to evaluate the potential of Re2Te5-based material for thermoelectric applications, we are currently exploring the synthesis and properties of filled compositions as well as n-type Re2Te5 samples. We present and discuss in this paper initial results obtained on Fe and Ag doped Re2Te5 samples.

Original languageEnglish (US)
Title of host publicationInternational Conference on Thermoelectrics, ICT, Proceedings
Editors Anon
PublisherIEEE
Pages298-301
Number of pages4
StatePublished - Dec 1 1998
EventProceedings of the 1998 17th International Conference on Thermoelectrics, ICT - Nagoya, Jpn
Duration: May 24 1998May 28 1998

Other

OtherProceedings of the 1998 17th International Conference on Thermoelectrics, ICT
CityNagoya, Jpn
Period5/24/985/28/98

ASJC Scopus subject areas

  • Engineering(all)

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