Source Line Sensing in Magneto-Electric Random-Access Memory to Reduce Read Disturbance and Improve Sensing Margin

Hochul Lee*, Cecile Grezes, Shaodi Wang, Farbod Ebrahimi, Puneet Gupta, Pedram Khalili Amiri, Kang L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A source line sensing (SLS) scheme is presented, along with a corresponding memory core circuit architecture, for the sensing operation of magneto-electric random-access memory (MeRAM). Compared to a conventional bit-line sensing (BLS) scheme, the proposed SLS, which exploits the voltage-controlled magnetic anisotropy (VCMA) effect, applies a voltage across the magneto-electric tunnel junction (MEJ) with an opposite polarity. The SLS significantly reduces read disturbance and increases the sensing margin due to the enhanced coercivity of the bit during the read operation. Experimental data demonstrate that the thermal stability of nanoscale MEJs increases up to 2 times during the SLS operation compared with conventional BLS. An MEJ compact model based the SLS simulation shows that read disturbance improves by a factor greater than 10{}^{9} fJ/V\cdot m and the sensing margin increases up to 3 times in the MEJ with the large VCMA coefficient \left(>\text{100}\ \text{fJ}/\text{V}\cdot\text{m}\right).

Original languageEnglish (US)
Article number7448888
JournalIEEE Magnetics Letters
Volume7
DOIs
StatePublished - Jan 1 2016

Keywords

  • Spin Electronics
  • magnetoelectric random access memory (MeRAM)
  • magnetoelectric tunnel junction (MEJ)
  • read disturbance
  • thermal stability
  • tunneling magnetoresistance (TMR)
  • voltage controlled magnetic anisotropy (VCMA)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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