Sources of hysteresis in carbon nanotube field-effect transistors and their elimination via methylsiloxane encapsulants and optimized growth procedures

Sung Hun Jin, Ahmad E. Islam, Tae Il Kim, Ji Hun Kim, Muhammad A. Alam, John A. Rogers*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

89 Scopus citations

Abstract

The origins of gate-induced hysteresis in carbon nanotube field-effect transistors are explained and techniques to eliminate this hysteresis with encapsulating layers of methylsiloxane and modified processes for nanotube growth are reported. A combined experimental and theoretical analysis of the dependence of hysteresis on the gate voltage sweep-rate reveals the locations, types, and densities of defects that contribute to hysteresis. Devices with designs that eliminate these defects exhibit more than ten times reduction in hysteresis compared to conventional layouts. Demonstrations in individual transistors that use both networks and arrays of nanotubes, and in simple logic gates built with these devices, illustrate the utility of the proposed approaches.

Original languageEnglish (US)
Pages (from-to)2276-2284
Number of pages9
JournalAdvanced Functional Materials
Volume22
Issue number11
DOIs
StatePublished - Jun 6 2012

Keywords

  • carbon nanotubes
  • field-effect transistors
  • hysteresis
  • spin-on-glass
  • sweep rates

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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