TY - JOUR
T1 - Spatial Collection in Colloidal Quantum Dot Solar Cells
AU - Ouellette, Olivier
AU - Lesage-Landry, Antoine
AU - Scheffel, Benjamin
AU - Hoogland, Sjoerd
AU - García de Arquer, F. Pelayo
AU - Sargent, Edward H.
N1 - Funding Information:
The authors thank L. Levina, E. Palmiano, D. Kopilovic, and R. Wolowiec for technical support throughout the project. The authors also thank M. Biondi and M.-J. Choi for help with device fabrication and J. Z. Fan, P. Todorović, R. Quintero-Bermudez, and G. Walters for fruitful discussions. SEM imaging was performed at the Ontario Centre for the Characterization of Advanced Materials (OCCAM, Toronto, ON). This project was financially supported by the Natural Sciences and Engineering Research Council of Canada (NSERC). O.O. received financial support through an NSERC Canada Graduate Scholarship. A.L.-L. received financial support through a Doctoral Research Scholarship from the Fonds de recherche du Québec - Nature et technologies (FRQNT).
Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/1/1
Y1 - 2020/1/1
N2 - In thin-film photovoltaic (PV) research and development, it is of interest to determine where the chief losses are occurring within the active layer. Herein, a method is developed and presented by which the spatial distribution of charge collection, operando, is ascertained, and its application in colloidal quantum dot (CQD) solar cells is demonstrated at a wide range of relevant bias conditions. A systematic computational method that relies only on knowledge of measured optical parameters and bias-dependent external quantum efficiency spectra is implemented. It is found that, in CQD PV devices, the region near the thiol-treated hole-transport layer suffers from low collection efficiency, as a result of bad band alignment at this interface. The active layer is not fully depleted at short-circuit conditions, and this accounts for the limited short-circuit current of these CQD solar cells. The high collection efficiency outside of the depleted region agrees with a diffusion length on the order of hundreds of nanometers. The method provides a quantitative tool to study the operating principles and the physical origins of losses in CQD solar cells, and can be deployed in thin-film solar cell device architectures based on perovskites, organics, CQDs, and combinations of these materials.
AB - In thin-film photovoltaic (PV) research and development, it is of interest to determine where the chief losses are occurring within the active layer. Herein, a method is developed and presented by which the spatial distribution of charge collection, operando, is ascertained, and its application in colloidal quantum dot (CQD) solar cells is demonstrated at a wide range of relevant bias conditions. A systematic computational method that relies only on knowledge of measured optical parameters and bias-dependent external quantum efficiency spectra is implemented. It is found that, in CQD PV devices, the region near the thiol-treated hole-transport layer suffers from low collection efficiency, as a result of bad band alignment at this interface. The active layer is not fully depleted at short-circuit conditions, and this accounts for the limited short-circuit current of these CQD solar cells. The high collection efficiency outside of the depleted region agrees with a diffusion length on the order of hundreds of nanometers. The method provides a quantitative tool to study the operating principles and the physical origins of losses in CQD solar cells, and can be deployed in thin-film solar cell device architectures based on perovskites, organics, CQDs, and combinations of these materials.
KW - colloidal quantum dots
KW - Gaussian regularization least-squares
KW - photovoltaics
KW - spatial collection efficiency
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U2 - 10.1002/adfm.201908200
DO - 10.1002/adfm.201908200
M3 - Article
AN - SCOPUS:85075465433
SN - 1616-301X
VL - 30
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 1
M1 - 1908200
ER -