Spatial mapping of efficiency of GaN/InGaN nanowire array solar cells using scanning photocurrent microscopy

Sarah L. Howell, Sonal Padalkar, Kunho Yoon, Qiming Li, Daniel D. Koleske, Jonathan J. Wierer, George T. Wang, Lincoln J. Lauhon*

*Corresponding author for this work

Research output: Contribution to journalArticle

59 Scopus citations

Abstract

GaN-InGaN core-shell nanowire array devices are characterized by spectrally resolved scanning photocurrent microscopy (SPCM). The spatially resolved external quantum efficiency is correlated with structure and composition inferred from atomic force microscope (AFM) topography, scanning transmission electron microscope (STEM) imaging, Raman microspectroscopy, and scanning photocurrent microscopy (SPCM) maps of the effective absorption edge. The experimental analyses are coupled with finite difference time domain simulations to provide mechanistic understanding of spatial variations in carrier generation and collection, which is essential to the development of heterogeneous novel architecture solar cell devices.

Original languageEnglish (US)
Pages (from-to)5123-5128
Number of pages6
JournalNano letters
Volume13
Issue number11
DOIs
StatePublished - Nov 13 2013

Keywords

  • InGaN
  • Nanowire
  • SPCM
  • photovoltaics
  • solar cell

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Howell, S. L., Padalkar, S., Yoon, K., Li, Q., Koleske, D. D., Wierer, J. J., Wang, G. T., & Lauhon, L. J. (2013). Spatial mapping of efficiency of GaN/InGaN nanowire array solar cells using scanning photocurrent microscopy. Nano letters, 13(11), 5123-5128. https://doi.org/10.1021/nl402331u