Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model

Seng Tiong Ho; Koustuban Ravi; Yingyan Huang; Qian Wang; Bipin Bhola; Xi Chen; Xiangyu Li

doi:10.1109/AOM.2010.5713550

Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model

Seng Tiong Ho^*, Koustuban Ravi, Yingyan Huang, Qian Wang, Bipin Bhola, Xi Chen, Xiangyu Li

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a multilevel multi-electron (MLME) system. We show how this MLMEFDTD model can be used for spatial-temporal simulation of a wide range of active optoelectronic and plasmonic devices. Realistic simulations ranging from semiconductor lasers, to plasmonic lasers, and semiconductor optical amplifiers are illustrated.

Original language	English (US)
Title of host publication	2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010
DOIs	https://doi.org/10.1109/AOM.2010.5713550
State	Published - 2010
Event	2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010 - Guangzhou, China Duration: Dec 3 2010 → Dec 6 2010

Publication series

Name	2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

Other

Other	2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010
Country/Territory	China
City	Guangzhou
Period	12/3/10 → 12/6/10

Keywords

Electromagnetic simulation
Optical amplifiers
Optoelectronics
Plasmonics
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/AOM.2010.5713550

Cite this

Ho, S. T., Ravi, K., Huang, Y., Wang, Q., Bhola, B., Chen, X., & Li, X. (2010). Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model. In 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010 Article 5713550 (2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010). https://doi.org/10.1109/AOM.2010.5713550

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title = "Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model",

abstract = "We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a multilevel multi-electron (MLME) system. We show how this MLMEFDTD model can be used for spatial-temporal simulation of a wide range of active optoelectronic and plasmonic devices. Realistic simulations ranging from semiconductor lasers, to plasmonic lasers, and semiconductor optical amplifiers are illustrated.",

keywords = "Electromagnetic simulation, Optical amplifiers, Optoelectronics, Plasmonics, Semiconductor lasers",

author = "Ho, \{Seng Tiong\} and Koustuban Ravi and Yingyan Huang and Qian Wang and Bipin Bhola and Xi Chen and Xiangyu Li",

year = "2010",

doi = "10.1109/AOM.2010.5713550",

language = "English (US)",

isbn = "9781424483938",

series = "2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010",

booktitle = "2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010",

note = "2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010 ; Conference date: 03-12-2010 Through 06-12-2010",

}

Ho, ST, Ravi, K, Huang, Y, Wang, Q, Bhola, B, Chen, X & Li, X 2010, Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model. in 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010., 5713550, 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010, 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010, Guangzhou, China, 12/3/10. https://doi.org/10.1109/AOM.2010.5713550

Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model. / Ho, Seng Tiong; Ravi, Koustuban; Huang, Yingyan et al.
2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010. 2010. 5713550 (2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model

AU - Ho, Seng Tiong

AU - Ravi, Koustuban

AU - Huang, Yingyan

AU - Wang, Qian

AU - Bhola, Bipin

AU - Chen, Xi

AU - Li, Xiangyu

PY - 2010

Y1 - 2010

N2 - We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a multilevel multi-electron (MLME) system. We show how this MLMEFDTD model can be used for spatial-temporal simulation of a wide range of active optoelectronic and plasmonic devices. Realistic simulations ranging from semiconductor lasers, to plasmonic lasers, and semiconductor optical amplifiers are illustrated.

AB - We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a multilevel multi-electron (MLME) system. We show how this MLMEFDTD model can be used for spatial-temporal simulation of a wide range of active optoelectronic and plasmonic devices. Realistic simulations ranging from semiconductor lasers, to plasmonic lasers, and semiconductor optical amplifiers are illustrated.

KW - Electromagnetic simulation

KW - Optical amplifiers

KW - Optoelectronics

KW - Plasmonics

KW - Semiconductor lasers

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M3 - Conference contribution

AN - SCOPUS:79952845601

SN - 9781424483938

T3 - 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

BT - 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

T2 - 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

Y2 - 3 December 2010 through 6 December 2010

ER -

Ho ST, Ravi K, Huang Y, Wang Q, Bhola B, Chen X et al. Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model. In 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010. 2010. 5713550. (2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010). doi: 10.1109/AOM.2010.5713550

Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

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