Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model

Seng-Tiong Ho*, Koustuban Ravi, Yingyan Huang, Qian Wang, Bipin Bhola, Xi Chen, Xiangyu Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a multilevel multi-electron (MLME) system. We show how this MLMEFDTD model can be used for spatial-temporal simulation of a wide range of active optoelectronic and plasmonic devices. Realistic simulations ranging from semiconductor lasers, to plasmonic lasers, and semiconductor optical amplifiers are illustrated.

Original languageEnglish (US)
Title of host publication2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010
DOIs
StatePublished - Dec 1 2010
Event2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010 - Guangzhou, China
Duration: Dec 3 2010Dec 6 2010

Publication series

Name2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

Other

Other2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010
CountryChina
CityGuangzhou
Period12/3/1012/6/10

Keywords

  • Electromagnetic simulation
  • Optical amplifiers
  • Optoelectronics
  • Plasmonics
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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