Abstract
GaN ultraviolet photovoltaic and photoconductive detectors were grown on sapphire substrates by metallorganic chemical vapor deposition. The spectral response was analyzed considering the detector structure of a p-n junction connected back-to-back with a Schottkty barrier. Based on the one-dimensional model of abrupt p-n junctions, the diffusion length of minority carriers was derived to be about 0.1 μm in n-GaN. To further characterize the n-GaN material, photoconductivity experiments have also been realized. The majority carrier lifetime of about 0.1 ms was obtained by analyzing the voltage-dependent responsivity of GaN photoconductors. The current-responsivity under a bias of 8 V was about 1 A/W.
Original language | English (US) |
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Pages (from-to) | 955-959 |
Number of pages | 5 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 395 |
State | Published - 1996 |
Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering