Spectral response of GaN P-N junction photovoltaic structures

D. Walker*, X. Zhang, P. Kung, A. Saxler, J. Xu, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

GaN ultraviolet photovoltaic and photoconductive detectors were grown on sapphire substrates by metallorganic chemical vapor deposition. The spectral response was analyzed considering the detector structure of a p-n junction connected back-to-back with a Schottkty barrier. Based on the one-dimensional model of abrupt p-n junctions, the diffusion length of minority carriers was derived to be about 0.1 μm in n-GaN. To further characterize the n-GaN material, photoconductivity experiments have also been realized. The majority carrier lifetime of about 0.1 ms was obtained by analyzing the voltage-dependent responsivity of GaN photoconductors. The current-responsivity under a bias of 8 V was about 1 A/W.

Original languageEnglish (US)
Pages (from-to)955-959
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume395
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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