The process of vapor phase growth of organometallic compounds makes it possible to obtain high-quality crystalline In//1// minus //xGa//xAs//yP//1// minus //y films. The knowledge of the structure of the interfacial region between different films is the crucial point for understanding the electronic properties of heterojunctions. It is demonstrated that spectroscopic ellipsometry appears to be suitable for high-precision studies of this interfacial region of heterojunctions.
|Translated title of the contribution||Spectroscopic Ellipsometry Study of In1 - xGaxAsyP< - y/InP Heterojunctions Obtained by Organometallic Chemical Vapor Deposition Growing.|
|Number of pages||2|
|Journal||Vide, les Couches Minces|
|State||Published - Mar 1 1986|
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