ETUDE PAR ELLIPSOMETRIE SPECTROSCOPIQUE D'HETEROJONCTIONS In//1// minus //xGa//xas//yP//1// minus //y/InP OBTENUES PAR CROISSANCE MOCVD.

B. Drevillon; E. Bertran; P. Alnot; J. Olivier; M. Razeghi

ETUDE PAR ELLIPSOMETRIE SPECTROSCOPIQUE D'HETEROJONCTIONS In//1// minus //xGa//xas//yP//1// minus //y/InP OBTENUES PAR CROISSANCE MOCVD.

Translated title of the contribution: Spectroscopic Ellipsometry Study of In_{1 -} _xGa_xAs_yP_{< -} _y/InP Heterojunctions Obtained by Organometallic Chemical Vapor Deposition Growing.

B. Drevillon^*, E. Bertran, P. Alnot, J. Olivier, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The process of vapor phase growth of organometallic compounds makes it possible to obtain high-quality crystalline In//1// minus //xGa//xAs//yP//1// minus //y films. The knowledge of the structure of the interfacial region between different films is the crucial point for understanding the electronic properties of heterojunctions. It is demonstrated that spectroscopic ellipsometry appears to be suitable for high-precision studies of this interfacial region of heterojunctions.

Translated title of the contribution	Spectroscopic Ellipsometry Study of In_{1 -} _xGa_xAs_yP_{< -} _y/InP Heterojunctions Obtained by Organometallic Chemical Vapor Deposition Growing.
Original language	French
Pages (from-to)	255-256
Number of pages	2
Journal	Vide, les Couches Minces
Volume	41
Issue number	231
State	Published - Mar 1 1986

ASJC Scopus subject areas

General Engineering

Cite this

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title = "ETUDE PAR ELLIPSOMETRIE SPECTROSCOPIQUE D'HETEROJONCTIONS In//1// minus //xGa//xas//yP//1// minus //y/InP OBTENUES PAR CROISSANCE MOCVD.",

abstract = "The process of vapor phase growth of organometallic compounds makes it possible to obtain high-quality crystalline In//1// minus //xGa//xAs//yP//1// minus //y films. The knowledge of the structure of the interfacial region between different films is the crucial point for understanding the electronic properties of heterojunctions. It is demonstrated that spectroscopic ellipsometry appears to be suitable for high-precision studies of this interfacial region of heterojunctions.",

author = "B. Drevillon and E. Bertran and P. Alnot and J. Olivier and M. Razeghi",

year = "1986",

month = mar,

day = "1",

language = "French",

volume = "41",

pages = "255--256",

journal = "Vide, les Couches Minces",

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publisher = "Societe Francaise du Vide",

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T1 - ETUDE PAR ELLIPSOMETRIE SPECTROSCOPIQUE D'HETEROJONCTIONS In//1// minus //xGa//xas//yP//1// minus //y/InP OBTENUES PAR CROISSANCE MOCVD.

AU - Drevillon, B.

AU - Bertran, E.

AU - Alnot, P.

AU - Olivier, J.

AU - Razeghi, M.

PY - 1986/3/1

Y1 - 1986/3/1

N2 - The process of vapor phase growth of organometallic compounds makes it possible to obtain high-quality crystalline In//1// minus //xGa//xAs//yP//1// minus //y films. The knowledge of the structure of the interfacial region between different films is the crucial point for understanding the electronic properties of heterojunctions. It is demonstrated that spectroscopic ellipsometry appears to be suitable for high-precision studies of this interfacial region of heterojunctions.

AB - The process of vapor phase growth of organometallic compounds makes it possible to obtain high-quality crystalline In//1// minus //xGa//xAs//yP//1// minus //y films. The knowledge of the structure of the interfacial region between different films is the crucial point for understanding the electronic properties of heterojunctions. It is demonstrated that spectroscopic ellipsometry appears to be suitable for high-precision studies of this interfacial region of heterojunctions.

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M3 - Article

AN - SCOPUS:0022672887

SN - 0223-4335

VL - 41

SP - 255

EP - 256

JO - Vide, les Couches Minces

JF - Vide, les Couches Minces

IS - 231

ER -

ETUDE PAR ELLIPSOMETRIE SPECTROSCOPIQUE D'HETEROJONCTIONS In//1// minus //xGa//xas//yP//1// minus //y/InP OBTENUES PAR CROISSANCE MOCVD.

Abstract

ASJC Scopus subject areas

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