ETUDE PAR ELLIPSOMETRIE SPECTROSCOPIQUE D'HETEROJONCTIONS In//1// minus //xGa//xas//yP//1// minus //y/InP OBTENUES PAR CROISSANCE MOCVD.

Translated title of the contribution: Spectroscopic Ellipsometry Study of In1 - xGaxAsyP< - y/InP Heterojunctions Obtained by Organometallic Chemical Vapor Deposition Growing.

B. Drevillon*, E. Bertran, P. Alnot, J. Olivier, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The process of vapor phase growth of organometallic compounds makes it possible to obtain high-quality crystalline In//1// minus //xGa//xAs//yP//1// minus //y films. The knowledge of the structure of the interfacial region between different films is the crucial point for understanding the electronic properties of heterojunctions. It is demonstrated that spectroscopic ellipsometry appears to be suitable for high-precision studies of this interfacial region of heterojunctions.

Translated title of the contributionSpectroscopic Ellipsometry Study of In1 - xGaxAsyP< - y/InP Heterojunctions Obtained by Organometallic Chemical Vapor Deposition Growing.
Original languageFrench
Pages (from-to)255-256
Number of pages2
JournalVide, les Couches Minces
Volume41
Issue number231
StatePublished - Mar 1 1986

ASJC Scopus subject areas

  • Engineering(all)

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