Spectroscopic ellipsometry study of the In1-xGa xAsyP1-y/InP heterojunctions grown by metalorganic chemical-vapor deposition

B. Drevillon; E. Bertran; P. Alnot; J. Olivier; M. Razeghi

doi:10.1063/1.337603

Spectroscopic ellipsometry study of the In_1-xGa _xAs_yP_1-y/InP heterojunctions grown by metalorganic chemical-vapor deposition

B. Drevillon^*, E. Bertran, P. Alnot, J. Olivier, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The dielectric functions of InP, In_0.53Ga_0.47As, and In_0.75Ga_0.25As_0.5P_0.5 epitaxial layers have been measured using a polarization-modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x-ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical-vapor deposition grown In_0.53Ga_0.47As/InP and In_0.75Ga _0.25As_0.5P_0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In _1-xGa_xAs_y/InP and InP/In _1-xGa_xAs_yP_1-y. The sharpest interface is obtained for InP growth on In_0.75Ga _0.25As_0.5P_0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized.

Original language	English (US)
Pages (from-to)	3512-3518
Number of pages	7
Journal	Journal of Applied Physics
Volume	60
Issue number	10
DOIs	https://doi.org/10.1063/1.337603
State	Published - 1986

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General Physics and Astronomy

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title = "Spectroscopic ellipsometry study of the In1-xGa xAsyP1-y/InP heterojunctions grown by metalorganic chemical-vapor deposition",

abstract = "The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization-modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x-ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical-vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga 0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In 1-xGaxAsy/InP and InP/In 1-xGaxAsyP1-y. The sharpest interface is obtained for InP growth on In0.75Ga 0.25As0.5P0.5 where the interface region is estimated to be (10±10) {\AA} thick. The importance of performing in situ SE measurements is emphasized.",

author = "B. Drevillon and E. Bertran and P. Alnot and J. Olivier and M. Razeghi",

year = "1986",

doi = "10.1063/1.337603",

language = "English (US)",

volume = "60",

pages = "3512--3518",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Spectroscopic ellipsometry study of the In1-xGa xAsyP1-y/InP heterojunctions grown by metalorganic chemical-vapor deposition

AU - Drevillon, B.

AU - Bertran, E.

AU - Alnot, P.

AU - Olivier, J.

AU - Razeghi, M.

PY - 1986

Y1 - 1986

N2 - The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization-modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x-ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical-vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga 0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In 1-xGaxAsy/InP and InP/In 1-xGaxAsyP1-y. The sharpest interface is obtained for InP growth on In0.75Ga 0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized.

AB - The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization-modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x-ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical-vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga 0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In 1-xGaxAsy/InP and InP/In 1-xGaxAsyP1-y. The sharpest interface is obtained for InP growth on In0.75Ga 0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized.

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Spectroscopic ellipsometry study of the In_1-xGa _xAs_yP_1-y/InP heterojunctions grown by metalorganic chemical-vapor deposition

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