Spectroscopic investigation of electron-hole plasma properties in InGaAs/InP quantum well structures

G. Tränkle*, E. Lach, A. Forchel, F. Scholz, P. Wiedemann, K. W. Benz, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Using photoluminescence we investigated the properties of quasi-two-dimensional electron-hole plasmas in lattice-matched InGaAs/InP-multi-quantum well structures under quasi-stationary excitation. From the lineshape analysis of the spectra we obtained the plasma parameters and information on the subband structure. From optical transitions between higher subbands we determine the conduction band discontinuity to be 210meV, corresponding to 35% of the total discontinuity.

Original languageEnglish (US)
Pages (from-to)21-24
Number of pages4
JournalSuperlattices and Microstructures
Volume3
Issue number1
DOIs
StatePublished - 1987

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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