Abstract
Two competing recombination mechanisms of stimulated emission in the vicinity of 145 K have been directly observed in the temperature dependence of the optical emission spectra for high-quality, unintentionally doped gallium nitride. Our analysis of the spectra indicates that exciton-exciton scattering is responsible for stimulated emission below 145 K, while at higher temperatures an electron-hole plasma becomes the dominant mechanism.
Original language | English (US) |
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Pages (from-to) | 4145-4147 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 77 |
Issue number | 25 |
DOIs | |
State | Published - Dec 18 2000 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)