Specular ion current measurements as a quantitative, real-time probe of GaAs(001) epitaxial growth

K. C. Ruthe*, P. M. DeLuca, Scott A Barnett

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The growth of GaAs (001) surfaces by molecular beam epitaxy was monitored using specular ion current measurements. The technique used ion beam reflection and its measurement to provide information on film thicknesses and alloy compositions. Modeling of the film growth showed periodic variations in the density of two-dimensional islands and oscillations occuring due to nonspecular ion scattering from step edges. The island statistics revealed relatively constant island size, increased island density and island coalescence as the coverage was increased to about 0.4 ML.

Original languageEnglish (US)
Pages (from-to)984-991
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
StatePublished - May 1 2002
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: Oct 1 2001Oct 3 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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