Abstract
The growth of GaAs (001) surfaces by molecular beam epitaxy was monitored using specular ion current measurements. The technique used ion beam reflection and its measurement to provide information on film thicknesses and alloy compositions. Modeling of the film growth showed periodic variations in the density of two-dimensional islands and oscillations occuring due to nonspecular ion scattering from step edges. The island statistics revealed relatively constant island size, increased island density and island coalescence as the coverage was increased to about 0.4 ML.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 984-991 |
| Number of pages | 8 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 2002 |
| Event | 20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: Oct 1 2001 → Oct 3 2001 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering