Spin-dependent magnetotransport in a p-InMnSb/n -InSb magnetic semiconductor heterojunction

J. A. Peters; N. Rangaraju; C. Feeser; B. W. Wessels

doi:10.1063/1.3589987

Spin-dependent magnetotransport in a p-InMnSb/n -InSb magnetic semiconductor heterojunction

J. A. Peters, N. Rangaraju, C. Feeser, B. W. Wessels

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The spin-dependent transport properties in p-InMnSb/n-InSb magnetic semiconductor heterojunctions are presented. A positive junction giant magnetoresistance is observed from 75 to 298 K. The magnetoresistance is attributed to conduction via two spin channels resulting from p-d exchange interaction. The magnetoconductance of the heterojunction and its magnetic field dependence are well-described by a two-band model where the bands are spin-polarized. At 75 K and zero field, the spin polarization in the alloy is 90% and decreases to 48% at 298 K. The large spin polarization indicates that InMnSb should be suitable for spin-based transistors that operate at room temperature.

Original language	English (US)
Article number	193506
Journal	Applied Physics Letters
Volume	98
Issue number	19
DOIs	https://doi.org/10.1063/1.3589987
State	Published - May 9 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{2744fcbab0f147f5b2565fb52cd6610f,

title = "Spin-dependent magnetotransport in a p-InMnSb/n -InSb magnetic semiconductor heterojunction",

abstract = "The spin-dependent transport properties in p-InMnSb/n-InSb magnetic semiconductor heterojunctions are presented. A positive junction giant magnetoresistance is observed from 75 to 298 K. The magnetoresistance is attributed to conduction via two spin channels resulting from p-d exchange interaction. The magnetoconductance of the heterojunction and its magnetic field dependence are well-described by a two-band model where the bands are spin-polarized. At 75 K and zero field, the spin polarization in the alloy is 90% and decreases to 48% at 298 K. The large spin polarization indicates that InMnSb should be suitable for spin-based transistors that operate at room temperature.",

author = "Peters, {J. A.} and N. Rangaraju and C. Feeser and Wessels, {B. W.}",

note = "Funding Information: We thank Dr. Alexey Suslov at the National High Magnetic Field Laboratory for assistance with the measurements. The Air Force Office of Scientific Research (AFOSR) (Grant No. FA9550-07-1-0381) and the National Science Foundation (NSF) (Grant No. DMR-0804479) are acknowledged. We acknowledge the use of the microfabrication facility at Northwestern University, under NSF grant (Grant No. DMR-0076097).",

year = "2011",

month = may,

day = "9",

doi = "10.1063/1.3589987",

language = "English (US)",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Spin-dependent magnetotransport in a p-InMnSb/n -InSb magnetic semiconductor heterojunction

AU - Peters, J. A.

AU - Rangaraju, N.

AU - Feeser, C.

AU - Wessels, B. W.

N1 - Funding Information: We thank Dr. Alexey Suslov at the National High Magnetic Field Laboratory for assistance with the measurements. The Air Force Office of Scientific Research (AFOSR) (Grant No. FA9550-07-1-0381) and the National Science Foundation (NSF) (Grant No. DMR-0804479) are acknowledged. We acknowledge the use of the microfabrication facility at Northwestern University, under NSF grant (Grant No. DMR-0076097).

PY - 2011/5/9

Y1 - 2011/5/9

N2 - The spin-dependent transport properties in p-InMnSb/n-InSb magnetic semiconductor heterojunctions are presented. A positive junction giant magnetoresistance is observed from 75 to 298 K. The magnetoresistance is attributed to conduction via two spin channels resulting from p-d exchange interaction. The magnetoconductance of the heterojunction and its magnetic field dependence are well-described by a two-band model where the bands are spin-polarized. At 75 K and zero field, the spin polarization in the alloy is 90% and decreases to 48% at 298 K. The large spin polarization indicates that InMnSb should be suitable for spin-based transistors that operate at room temperature.

AB - The spin-dependent transport properties in p-InMnSb/n-InSb magnetic semiconductor heterojunctions are presented. A positive junction giant magnetoresistance is observed from 75 to 298 K. The magnetoresistance is attributed to conduction via two spin channels resulting from p-d exchange interaction. The magnetoconductance of the heterojunction and its magnetic field dependence are well-described by a two-band model where the bands are spin-polarized. At 75 K and zero field, the spin polarization in the alloy is 90% and decreases to 48% at 298 K. The large spin polarization indicates that InMnSb should be suitable for spin-based transistors that operate at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=79959679616&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959679616&partnerID=8YFLogxK

U2 - 10.1063/1.3589987

DO - 10.1063/1.3589987

M3 - Article

AN - SCOPUS:79959679616

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 193506

ER -

Spin-dependent magnetotransport in a p-InMnSb/n -InSb magnetic semiconductor heterojunction

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