Spin-dependent magnetotransport in a p-InMnSb/n -InSb magnetic semiconductor heterojunction

J. A. Peters, N. Rangaraju, C. Feeser, B. W. Wessels

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21 Scopus citations


The spin-dependent transport properties in p-InMnSb/n-InSb magnetic semiconductor heterojunctions are presented. A positive junction giant magnetoresistance is observed from 75 to 298 K. The magnetoresistance is attributed to conduction via two spin channels resulting from p-d exchange interaction. The magnetoconductance of the heterojunction and its magnetic field dependence are well-described by a two-band model where the bands are spin-polarized. At 75 K and zero field, the spin polarization in the alloy is 90% and decreases to 48% at 298 K. The large spin polarization indicates that InMnSb should be suitable for spin-based transistors that operate at room temperature.

Original languageEnglish (US)
Article number193506
JournalApplied Physics Letters
Issue number19
StatePublished - May 9 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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