Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity

S. Picozzi*, A. Continenza, A. J. Freeman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.

Original languageEnglish (US)
Pages (from-to)4723-4725
Number of pages3
JournalJournal of Applied Physics
Volume94
Issue number7
DOIs
StatePublished - Oct 1 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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