Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates

Z. T. Zhu, E. Menard, K. Hurley, R. G. Nuzzo, J. A. Rogers

Research output: Contribution to journalArticlepeer-review

89 Scopus citations

Abstract

Free-standing micro/nanoelements of single-crystal silicon with integrated doped regions for contacts provide a type of material that can be printed onto low-temperature device substrates, such as plastic, for high-performance mechanically flexible thin-film transistors (TFTs). We present simple approaches for fabricating collections of these elements, which we refer to as microstructured silicon (μs-Si), and for using spin-on dopants to introduce doped regions in them. Electrical and mechanical measurements of TFTs formed on plastic substrates with this doped μs-Si indicate excellent performance. These and other characteristics make the material potentially useful for emerging large area, flexible 'macroelectronic' devices.

Original languageEnglish (US)
Article number133507
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number13
DOIs
StatePublished - Mar 28 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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