Abstract
Free-standing micro/nanoelements of single-crystal silicon with integrated doped regions for contacts provide a type of material that can be printed onto low-temperature device substrates, such as plastic, for high-performance mechanically flexible thin-film transistors (TFTs). We present simple approaches for fabricating collections of these elements, which we refer to as microstructured silicon (μs-Si), and for using spin-on dopants to introduce doped regions in them. Electrical and mechanical measurements of TFTs formed on plastic substrates with this doped μs-Si indicate excellent performance. These and other characteristics make the material potentially useful for emerging large area, flexible 'macroelectronic' devices.
Original language | English (US) |
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Article number | 133507 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 13 |
DOIs | |
State | Published - Mar 28 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)