Spintronics for instant-on nonvolatile electronics

Kang L. Wang*, P. Khalili Amiri

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using collective spins or nanomagnets offers the possibility of constructing high speed nonvolatile electronics, resulting in the energy dissipation at the device level possibly approaching the fundamental equilibrium Maxwell-Shannon-Landaur limit. This paper will describe the progress in energy-efficient MgO-based magnetic tunnel junction (MTJ) bits for high-speed spin-transfer-torque magnetoresistive random access memory (STT-MRAM). Furthermore, the possibility of a Magnetoelectric RAM (MeRAM) as a promising candidate for ultralow power is discussed. Demonstrated principles and experiments of voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric field offer much reduced switching energy at high speed. The latter may enable a new paradigm of high speed nonvolatile electronics.

Original languageEnglish (US)
Title of host publication2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages117-118
Number of pages2
DOIs
StatePublished - Dec 1 2012
Event2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia
Duration: Dec 12 2012Dec 14 2012

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
CountryAustralia
CityMelbourne, VIC
Period12/12/1212/14/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Wang, K. L., & Amiri, P. K. (2012). Spintronics for instant-on nonvolatile electronics. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 117-118). [6472388] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472388