Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Xinge Yu, Jeremy Smith, Nanjia Zhou, Li Zeng, Peijun Guo, Yu Xia, Ana Alvarez, Stefano Aghion, Hui Lin, Junsheng Yu, Robert P.H. Chang*, Michael J. Bedzyk, Rafael Ferragut, Tobin J. Marks, Antonio Facchetti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

146 Scopus citations


Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.

Original languageEnglish (US)
Pages (from-to)3217-3222
Number of pages6
JournalProceedings of the National Academy of Sciences of the United States of America
Issue number11
StatePublished - Mar 17 2015


  • Combustion synthesis
  • Low-temperature growth
  • Oxide film
  • Oxide transistor
  • Transistor

ASJC Scopus subject areas

  • General


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