TY - JOUR
T1 - Spray-combustion synthesis
T2 - Efficient solution route to high-performance oxide transistors
AU - Yu, Xinge
AU - Smith, Jeremy
AU - Zhou, Nanjia
AU - Zeng, Li
AU - Guo, Peijun
AU - Xia, Yu
AU - Alvarez, Ana
AU - Aghion, Stefano
AU - Lin, Hui
AU - Yu, Junsheng
AU - Chang, Robert P.H.
AU - Bedzyk, Michael J.
AU - Ferragut, Rafael
AU - Marks, Tobin J.
AU - Facchetti, Antonio
PY - 2015/3/17
Y1 - 2015/3/17
N2 - Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.
AB - Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.
KW - Combustion synthesis
KW - Low-temperature growth
KW - Oxide film
KW - Oxide transistor
KW - Transistor
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U2 - 10.1073/pnas.1501548112
DO - 10.1073/pnas.1501548112
M3 - Article
C2 - 25733848
AN - SCOPUS:84925307911
VL - 112
SP - 3217
EP - 3222
JO - Proceedings of the National Academy of Sciences of the United States of America
JF - Proceedings of the National Academy of Sciences of the United States of America
SN - 0027-8424
IS - 11
ER -