Sputter cleaning and smoothening of GaAs(001) using glancing-angle ion bombardment

J. G.C. Labanda*, S. A. Barnett, L. Hultman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Flat, clean, essentially defect-free GaAs(001) surfaces were produced at 570°C in an As4 overpressure using 1 keV Ar ion bombardment at an impingement angle φ of 15°from the surface plane and a dose of 2.3×1016 ions/cm2. Ion bombardment smoothened the surfaces leading to minimum roughness values of ≈0.3 nm and reflection high-energy electron diffraction (RHEED) patterns that showed streaks with a 2×4 reconstruction. GaAs films grown by molecular beam epitaxy on the sputter cleaned surfaces exhibited strong RHEED oscillations. Cross-sectional transmission electron microscope images showed that the epitaxial layers and substrates were defect-free except for 2-3-nm diam dislocation loops observed 10-20 nm below the substrate surface, separated by >100 nm along the interface.

Original languageEnglish (US)
Pages (from-to)3114
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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