A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.
ASJC Scopus subject areas
- Physics and Astronomy(all)