Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO

B. V. Vuchic*, K. L. Merkle, K. A. Dean, D. B. Buchholz, R. P.H. Chang, L. D. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.

Original languageEnglish (US)
Pages (from-to)2591-2594
Number of pages4
JournalJournal of Applied Physics
Issue number6
StatePublished - 1995

ASJC Scopus subject areas

  • General Physics and Astronomy


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