Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO

B. V. Vuchic; K. L. Merkle; K. A. Dean; D. B. Buchholz; R. P.H. Chang; L. D. Marks

doi:10.1063/1.358721

Sputter-induced grain boundary junctions in YBa₂Cu ₃O_7-x thin films on MgO

B. V. Vuchic^*, K. L. Merkle, K. A. Dean, D. B. Buchholz, R. P.H. Chang, L. D. Marks

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa₂Cu₃O_7-x thin films on MgO. The YBa₂Cu₃O_7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa ₂Cu₃O_7-x thin film grown on an adjacent unsputtered region of the substrate. YBa₂Cu₃O _7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.

Original language	English (US)
Pages (from-to)	2591-2594
Number of pages	4
Journal	Journal of Applied Physics
Volume	77
Issue number	6
DOIs	https://doi.org/10.1063/1.358721
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO",

abstract = "A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.",

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AU - Vuchic, B. V.

AU - Merkle, K. L.

AU - Dean, K. A.

AU - Buchholz, D. B.

AU - Chang, R. P.H.

AU - Marks, L. D.

PY - 1995

Y1 - 1995

N2 - A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.

AB - A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.

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Sputter-induced grain boundary junctions in YBa₂Cu ₃O_7-x thin films on MgO

Abstract

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