Stability of As and B doped Si with respect to overlaying CoSi2 and TiSi2 thin films

K. Maex, G. Ghosh, L. Delaey, V. Probst, P. Lippens, L. Van Den hove, R. F. De Keersmaecker

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

The thermodynamic equilibrium of structures consisting of a thin film silicide (TiSi2or CoSi2) on doped Si (with As or B) is investigated. Isothermal sections of the ternary phase diagrams for Ti-Si-B, Co-Si-B, Ti-Si-As, and Co-Si-As have been evaluated, indicating the stability of high B concentrations in Si underneath a CoSi2 layer, the instability of high As concentrations in Si underneath a CoSi2 layer, and of B and As concentrations underneath a TiSi2layer. The obtained thermodynamic predictions agree very well with experimental results (i) on the redistribution of dopants during silicide formation, (ii) on the diffusion of dopants from an ion implanted silicide, and (iii) on the stability of highly doped regions underneath the silicide, both for the case of TiSi2 and CoSi2. It is shown that even though the inaccuracy of reported thermodynamic data is substantial, thermodynamic calculations provide a useful guidance and are consistent with the experimental results.

Original languageEnglish (US)
Pages (from-to)1209-1217
Number of pages9
JournalJournal of Materials Research
Volume4
Issue number5
DOIs
StatePublished - Jan 1 1989

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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