Stability of far fields in double heterostructure and multiple quantum well InAsSb/lnPAsSb/lnAs midinfrared lasers

H. Yi; A. Rybaltowski; J. Diaz; Donghai Wu; B. Lane; Y. Xiao; Manijeh Razeghi

doi:10.1063/1.119135

Stability of far fields in double heterostructure and multiple quantum well InAsSb/lnPAsSb/lnAs midinfrared lasers

H. Yi^*, A. Rybaltowski, J. Diaz, Donghai Wu, B. Lane, Y. Xiao, Manijeh Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Far fields in perpendicular direction to the junction are investigated in double heterostructure (DH) and multiple quantum well (MQW) midwave-infrared InAsSb/InPAsSb/InAs lasers (λ = 3.2-3.6 μm). Strong broadening of the far fields in the DH lasers was observed with increases in temperature and/or current. On the contrary, MQW lasers with otherwise identical structure exhibit very stable far fields as narrow as 23° for all the operating conditions investigated. Our experiment and theoretical modeling suggest that these different behaviors of far fields in DH and MQW lasers are attributed to the refractive index fluctuation in the InAsSb laser active region.

Original language	English (US)
Pages (from-to)	3236-3238
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	24
DOIs	https://doi.org/10.1063/1.119135
State	Published - Jun 16 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Stability of far fields in double heterostructure and multiple quantum well InAsSb/lnPAsSb/lnAs midinfrared lasers",

abstract = "Far fields in perpendicular direction to the junction are investigated in double heterostructure (DH) and multiple quantum well (MQW) midwave-infrared InAsSb/InPAsSb/InAs lasers (λ = 3.2-3.6 μm). Strong broadening of the far fields in the DH lasers was observed with increases in temperature and/or current. On the contrary, MQW lasers with otherwise identical structure exhibit very stable far fields as narrow as 23° for all the operating conditions investigated. Our experiment and theoretical modeling suggest that these different behaviors of far fields in DH and MQW lasers are attributed to the refractive index fluctuation in the InAsSb laser active region.",

author = "H. Yi and A. Rybaltowski and J. Diaz and Donghai Wu and B. Lane and Y. Xiao and Manijeh Razeghi",

year = "1997",

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T1 - Stability of far fields in double heterostructure and multiple quantum well InAsSb/lnPAsSb/lnAs midinfrared lasers

AU - Yi, H.

AU - Rybaltowski, A.

AU - Diaz, J.

AU - Wu, Donghai

AU - Lane, B.

AU - Xiao, Y.

AU - Razeghi, Manijeh

PY - 1997/6/16

Y1 - 1997/6/16

N2 - Far fields in perpendicular direction to the junction are investigated in double heterostructure (DH) and multiple quantum well (MQW) midwave-infrared InAsSb/InPAsSb/InAs lasers (λ = 3.2-3.6 μm). Strong broadening of the far fields in the DH lasers was observed with increases in temperature and/or current. On the contrary, MQW lasers with otherwise identical structure exhibit very stable far fields as narrow as 23° for all the operating conditions investigated. Our experiment and theoretical modeling suggest that these different behaviors of far fields in DH and MQW lasers are attributed to the refractive index fluctuation in the InAsSb laser active region.

AB - Far fields in perpendicular direction to the junction are investigated in double heterostructure (DH) and multiple quantum well (MQW) midwave-infrared InAsSb/InPAsSb/InAs lasers (λ = 3.2-3.6 μm). Strong broadening of the far fields in the DH lasers was observed with increases in temperature and/or current. On the contrary, MQW lasers with otherwise identical structure exhibit very stable far fields as narrow as 23° for all the operating conditions investigated. Our experiment and theoretical modeling suggest that these different behaviors of far fields in DH and MQW lasers are attributed to the refractive index fluctuation in the InAsSb laser active region.

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Stability of far fields in double heterostructure and multiple quantum well InAsSb/lnPAsSb/lnAs midinfrared lasers

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