Stabilization of β-SiB3 from liquid Ga: A boron-rich binary semiconductor resistant to high-temperature air oxidation

James R. Salvador; Daniel Bilc; S. D. Mahanti; Mercouri G. Kanatzidis

doi:10.1002/anie.200219986

Stabilization of β-SiB₃ from liquid Ga: A boron-rich binary semiconductor resistant to high-temperature air oxidation

James R. Salvador, Daniel Bilc, S. D. Mahanti, Mercouri G. Kanatzidis^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Unlike the original form of SiB₃, which has a huge compositional spread in its Si/B ratio and a crystal structure with Si atoms randomly distributed over all its B₁₂ cages, the new form of SiB₃ (β form; see structure) is stoichiometrically and crystallographically ordered. The clear segregation of Si and B atoms in the new form is believed to be responsible for its enhanced oxidation resistance observed at high temperatures.

Original language	English (US)
Pages (from-to)	1929-1932
Number of pages	4
Journal	Angewandte Chemie - International Edition
Volume	42
Issue number	17
DOIs	https://doi.org/10.1002/anie.200219986
State	Published - Apr 29 2003

Keywords

Boron
Gallium
Semiconductors
Silicon

ASJC Scopus subject areas

Catalysis
Chemistry(all)

Access to Document

10.1002/anie.200219986

Cite this

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abstract = "Unlike the original form of SiB3, which has a huge compositional spread in its Si/B ratio and a crystal structure with Si atoms randomly distributed over all its B12 cages, the new form of SiB3 (β form; see structure) is stoichiometrically and crystallographically ordered. The clear segregation of Si and B atoms in the new form is believed to be responsible for its enhanced oxidation resistance observed at high temperatures.",

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