Abstract
Unlike the original form of SiB3, which has a huge compositional spread in its Si/B ratio and a crystal structure with Si atoms randomly distributed over all its B12 cages, the new form of SiB3 (β form; see structure) is stoichiometrically and crystallographically ordered. The clear segregation of Si and B atoms in the new form is believed to be responsible for its enhanced oxidation resistance observed at high temperatures.
Original language | English (US) |
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Pages (from-to) | 1929-1932 |
Number of pages | 4 |
Journal | Angewandte Chemie - International Edition |
Volume | 42 |
Issue number | 17 |
DOIs | |
State | Published - Apr 29 2003 |
Keywords
- Boron
- Gallium
- Semiconductors
- Silicon
ASJC Scopus subject areas
- Catalysis
- Chemistry(all)