Stabilization of a monolayer tellurene phase at CdTe interfaces

Tadas Paulauskas*, Fatih G. Sen, Ce Sun, Paolo Longo, Yuan Zhang, Saw Wai Hla, Maria K.Y. Chan, Moon J. Kim, Robert F. Klie

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Two-dimensional (2D) materials provide a plethora of novel condensed matter physics and are the new playground in materials science, offering potentially vast applications. One of the critical hurdles for many 2D systems is the synthesis of these low-dimensional systems as well as the prediction and identification of new candidates. Herein, a self-assembly of a monolayer tellurene by bonding CdTe wafers is demonstrated for the first time. The conventional applications of wafer-bonding range from the production of microelectromechanical systems to the synthesis of lattice-mismatched multi-junction photovoltaics. Due to the heterogeneous materials that are typically employed, the bond-interface usually contains a thin amorphous layer or arrays of dislocations. Such an interface is thus itself inactive and in many cases has detrimental effects on the device. The new material phase stabilized in this work consists of an undulating monolayer of tellurium atoms covalently bonded to {111} Cd-terminated CdTe wafer surfaces. First-principles calculations and experimentally observed changes in the localized plasmon excitation energy indicate the clear rearrangement of the underlying band-structure suggesting a metallic character, bands showing linear dispersion, and a significant asymmetric spin-band splitting. The I-V characteristics show the presence of a highly conductive pathway that lowers the resistivity by three orders of magnitude, as compared to bulk CdTe, which can be attributed to the tellurium monolayer. The findings indicate that suitably chosen crystallographic wafer surfaces can act as structural templates allowing the production of exotic phases. The presently stabilized monolayer is an addition to the family of tellurene variants, providing new insights into the fundamental properties of this and other emerging 2D materials, while attracting attention to the unusual side of the wafer-bonding technology exemplified in this study.

Original languageEnglish (US)
Pages (from-to)14698-14706
Number of pages9
JournalNanoscale
Volume11
Issue number31
DOIs
StatePublished - Aug 21 2019

Funding

This work was supported in parts by the U.S. Department of Energy through the EERE-Sunshot BRIDGE (DE-EE0005956) and PVRD (DE-EE0007545) programs. The authors thank John Mitchell and Olle Heinonen for helpful discussions. The authors thank D. W. McComb and R. E. A. Williams from the Center for Electron Microscopy and Analysis (cemas.osu.edu) at The Ohio State University for granting access to the monochromated FEI Titan and assistance with aligning the monochromator. This work was also partially supported by the Louis Beecherl, Jr. endowment funds, the Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers, sponsored by MARCO and DARPA, and the SWAN Center, an SRC center sponsored by the Nanoelectronics Research Initiative and NIST. The use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. This research used resources of the National Energy Research Scientific Computing Center, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. This work used the Extreme Science and Engineering Discovery Environment (XSEDE), which is supported by National Science Foundation grant number ACI-1053575. MJK was supported in part by the Global Research and Development Center Program (2018K1A4A3A01064272) and the Brain Pool Program (2019H1D3A2A01061938) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT. This work was supported in parts by the U.S. Department of Energy through the EERE-Sunshot BRIDGE (DE-EE0005956) and PVRD (DE-EE0007545) programs. The authors thank John Mitchell and Olle Heinonen for helpful discussions. The authors thank D. W. McComb and R. E. A. Williams from the Center for Electron Microscopy and Analysis (cemas.osu.edu) at The Ohio State University for granting access to the mono-chromated FEI Titan and assistance with aligning the monochromator. This work was also partially supported by the Louis Beecherl, Jr. endowment funds, the Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers, sponsored by MARCO and DARPA, and the SWAN Center, an SRC center sponsored by the Nanoelectronics Research Initiative and NIST. The use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. This research used resources of the National Energy Research Scientific Computing Center, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. This work used the Extreme Science and Engineering Discovery Environment (XSEDE), which is supported by National Science Foundation grant number ACI-1053575. MJK was supported in part by the Global Research and Development Center Program (2018K1A4A3A01064272) and the Brain Pool Program (2019H1D3A2A01061938) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT.

ASJC Scopus subject areas

  • General Materials Science

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