Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2

Golnaz Karbasian; Roberto dos Reis; Ajay K. Yadav; Ava J. Tan; Chenming Hu; Sayeef Salahuddin

doi:10.1063/1.4993739

Stabilization of ferroelectric phase in tungsten capped Hf_0.8Zr_0.2O₂

Golnaz Karbasian, Roberto dos Reis, Ajay K. Yadav, Ava J. Tan, Chenming Hu, Sayeef Salahuddin^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

We report on the stabilization of the ferroelectric phase in Hf_0.8Zr_0.2O₂ with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf_0.8Zr_0.2O₂ after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric Hf_xZr_1-xO₂ commonly capped with TiN.

Original language	English (US)
Article number	022907
Journal	Applied Physics Letters
Volume	111
Issue number	2
DOIs	https://doi.org/10.1063/1.4993739
State	Published - Jul 10 2017

Funding

This research was funded by Berkeley Center for Negative Capacitance Transistors (BCNCT). The work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC0205CH11231.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4993739

Cite this

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title = "Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2",

abstract = "We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN.",

author = "Golnaz Karbasian and {dos Reis}, Roberto and Yadav, {Ajay K.} and Tan, {Ava J.} and Chenming Hu and Sayeef Salahuddin",

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AU - Karbasian, Golnaz

AU - dos Reis, Roberto

AU - Yadav, Ajay K.

AU - Tan, Ava J.

AU - Hu, Chenming

AU - Salahuddin, Sayeef

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N2 - We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN.

AB - We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN.

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