Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2

Golnaz Karbasian, Roberto dos Reis, Ajay K. Yadav, Ava J. Tan, Chenming Hu, Sayeef Salahuddin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN.

Original languageEnglish (US)
Article number022907
JournalApplied Physics Letters
Volume111
Issue number2
DOIs
StatePublished - Jul 10 2017

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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