L'ETAT L'ART DE LA CROISSANCE MOCVD DES COMPOSES III-V.

Translated title of the contribution: State-of-the-Art of the Organometallic Chemical Vapor Deposition Growing of Group III-V Compounds.

M. Razeghi*, J. P. Duchemin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The state-of-the-art of the OMCVD growth and the characterization of multilayer structures of high-quality semiconductors with extremely fine dimensional and compositional control is presented. The ability of the OMCVD growth technique to fabricate ultrathin epitaxial layers of appropriate semiconductors with controlled doping and hyperabrupt heterojunctions between lattice-matched and mismatched materials, as well as their applications for opto- and microelectronic devices is described.

Translated title of the contributionState-of-the-Art of the Organometallic Chemical Vapor Deposition Growing of Group III-V Compounds.
Original languageFrench
Pages (from-to)257-258
Number of pages2
JournalVide, les Couches Minces
Volume41
Issue number231
StatePublished - Mar 1 1986

ASJC Scopus subject areas

  • Engineering(all)

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