L'ETAT L'ART DE LA CROISSANCE MOCVD DES COMPOSES III-V.

M. Razeghi; J. P. Duchemin

L'ETAT L'ART DE LA CROISSANCE MOCVD DES COMPOSES III-V.

Translated title of the contribution: State-of-the-Art of the Organometallic Chemical Vapor Deposition Growing of Group III-V Compounds.

M. Razeghi^*, J. P. Duchemin

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The state-of-the-art of the OMCVD growth and the characterization of multilayer structures of high-quality semiconductors with extremely fine dimensional and compositional control is presented. The ability of the OMCVD growth technique to fabricate ultrathin epitaxial layers of appropriate semiconductors with controlled doping and hyperabrupt heterojunctions between lattice-matched and mismatched materials, as well as their applications for opto- and microelectronic devices is described.

Translated title of the contribution	State-of-the-Art of the Organometallic Chemical Vapor Deposition Growing of Group III-V Compounds.
Original language	French
Pages (from-to)	257-258
Number of pages	2
Journal	Vide, les Couches Minces
Volume	41
Issue number	231
State	Published - Mar 1 1986

ASJC Scopus subject areas

General Engineering

Cite this

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L'ETAT L'ART DE LA CROISSANCE MOCVD DES COMPOSES III-V.

Abstract

ASJC Scopus subject areas

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