The state-of-the-art of the OMCVD growth and the characterization of multilayer structures of high-quality semiconductors with extremely fine dimensional and compositional control is presented. The ability of the OMCVD growth technique to fabricate ultrathin epitaxial layers of appropriate semiconductors with controlled doping and hyperabrupt heterojunctions between lattice-matched and mismatched materials, as well as their applications for opto- and microelectronic devices is described.
|Translated title of the contribution||State-of-the-Art of the Organometallic Chemical Vapor Deposition Growing of Group III-V Compounds.|
|Number of pages||2|
|Journal||Vide, les Couches Minces|
|State||Published - Mar 1 1986|
ASJC Scopus subject areas