Abstract
Very high quality Gax In1-xAsy P1-y (0 < x < 0.47, 0 < y < 1) lattice matched to InP heterojunctions, quantum-wells, and superlattices has been grown by the low pressure metalorganic chemical vapor deposition growth technique. High quality GalnAsP-InP double heterojunction lasers emitting at 1.3 y m and 0 1.55 μm have been fabricated with threshold current density as low as 430 A/cm2 and 500 A/cm2, respectively, for a cavity length of 400 ym. Room temperature CW threshold current as low as 6 mA, 8 mA and 12 mA have been measured (for stripe buried devices with cavity length of 300 μm and stripe width of 1 ym) for 1.3 μm, 1.5 μm and 1.55 μm DFB laser, respectively. Phase-locked high power laser arrays of GalnAsP-InP emitting at 1.3 ym have been fabricated with material grown by two step low pressure metalorganic chemical vapor deposition.
Original language | English (US) |
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Pages (from-to) | 18-26 |
Number of pages | 9 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 800 |
DOIs | |
State | Published - Sep 22 1987 |
Externally published | Yes |
Event | Novel Optoelectronic Devices 1987 - The Hague, United States Duration: Mar 30 1987 → Apr 3 1987 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering