State of the arts of GaxIn1-x Asy P1-y-InP laser grown by low-pressure metalorganic chemical vapor deposition

M. Razeghi, F. Omnes, P. Maurel, R. Blondeau, M. Krakowski

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

Very high quality Gax In1-xAsy P1-y (0 < x < 0.47, 0 < y < 1) lattice matched to InP heterojunctions, quantum-wells, and superlattices has been grown by the low pressure metalorganic chemical vapor deposition growth technique. High quality GalnAsP-InP double heterojunction lasers emitting at 1.3 y m and 0 1.55 μm have been fabricated with threshold current density as low as 430 A/cm2 and 500 A/cm2, respectively, for a cavity length of 400 ym. Room temperature CW threshold current as low as 6 mA, 8 mA and 12 mA have been measured (for stripe buried devices with cavity length of 300 μm and stripe width of 1 ym) for 1.3 μm, 1.5 μm and 1.55 μm DFB laser, respectively. Phase-locked high power laser arrays of GalnAsP-InP emitting at 1.3 ym have been fabricated with material grown by two step low pressure metalorganic chemical vapor deposition.

Original languageEnglish (US)
Pages (from-to)18-26
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume800
DOIs
StatePublished - Sep 22 1987
Externally publishedYes
EventNovel Optoelectronic Devices 1987 - The Hague, United States
Duration: Mar 30 1987Apr 3 1987

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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