Statistical leakage estimation of double gate FinFET devices considering the width quantization property

Jie Gu; John Keane; Sachin Sapatnekar; Chris H. Kim

doi:10.1109/TVLSI.2007.909809

Statistical leakage estimation of double gate FinFET devices considering the width quantization property

Jie Gu^*, John Keane, Sachin Sapatnekar, Chris H. Kim

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that the conventional approach underestimates the average leakage current of FinFET devices by as much as 43% while the proposed approach gives a precise estimation with an error less than 5%. Design example on subthreshold circuits shows the effectiveness of the proposed method.

Original language	English (US)
Pages (from-to)	206-209
Number of pages	4
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	16
Issue number	2
DOIs	https://doi.org/10.1109/TVLSI.2007.909809
State	Published - Feb 2008

Keywords

Circuit modeling
Integrated circuit (IC) design
Leakage currents

ASJC Scopus subject areas

Software
Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/TVLSI.2007.909809

Cite this

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abstract = "This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that the conventional approach underestimates the average leakage current of FinFET devices by as much as 43% while the proposed approach gives a precise estimation with an error less than 5%. Design example on subthreshold circuits shows the effectiveness of the proposed method.",

keywords = "Circuit modeling, Integrated circuit (IC) design, Leakage currents",

author = "Jie Gu and John Keane and Sachin Sapatnekar and Kim, {Chris H.}",

note = "Funding Information: Manuscript received September 4, 2006; revised March 14, 2007. This work was supported in part by Intel and by IBM. The authors are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: jiegu@ece. umn.edu). Digital Object Identifier 10.1109/TVLSI.2007.909809",

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AU - Sapatnekar, Sachin

AU - Kim, Chris H.

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N2 - This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that the conventional approach underestimates the average leakage current of FinFET devices by as much as 43% while the proposed approach gives a precise estimation with an error less than 5%. Design example on subthreshold circuits shows the effectiveness of the proposed method.

AB - This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that the conventional approach underestimates the average leakage current of FinFET devices by as much as 43% while the proposed approach gives a precise estimation with an error less than 5%. Design example on subthreshold circuits shows the effectiveness of the proposed method.

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Statistical leakage estimation of double gate FinFET devices considering the width quantization property

Abstract

Keywords

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