Statistical leakage estimation of double gate FinFET devices considering the width quantization property

Jie Gu*, John Keane, Sachin Sapatnekar, Chris H. Kim

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that the conventional approach underestimates the average leakage current of FinFET devices by as much as 43% while the proposed approach gives a precise estimation with an error less than 5%. Design example on subthreshold circuits shows the effectiveness of the proposed method.

Original languageEnglish (US)
Pages (from-to)206-209
Number of pages4
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume16
Issue number2
DOIs
StatePublished - Feb 2008

Keywords

  • Circuit modeling
  • Integrated circuit (IC) design
  • Leakage currents

ASJC Scopus subject areas

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Statistical leakage estimation of double gate FinFET devices considering the width quantization property'. Together they form a unique fingerprint.

Cite this