@inproceedings{72d81ae967524464ba12c37729fa76ca,
title = "STEM EDS X-ray mapping, TEM and HREM studies of the effect of gas switching procedures on the chemical abruptness of interfaces in MOCVD GaInAs/InP MQW structures",
abstract = "STEM EDS X-ray mapping, TEM and HREM studies have been performed to investigate the chemical compositional abruptness and planarity of interfaces in MOCVD GaInAs/InP MQW structures grown using different gas switching procedures. The results obtained demonstrate that STEM EDS X-ray mapping is a powerful technique for revealing directly the abruptness of interfaces in MQW structures and that the use of different gas switching procedures can have a major effect on both the abruptness and planarity of interfaces in MOCVD GaInAs/InP MQW structures.",
author = "Long, {N. J.} and Norman, {A. G.} and Petford-Long, {A. K.} and Butler, {B. R.} and Cureton, {C. G.} and Booker, {G. R.} and Thrush, {E. J.}",
year = "1991",
language = "English (US)",
isbn = "0854984062",
series = "Institute of Physics Conference Series",
publisher = "Publ by Inst of Physics Publ Ltd",
number = "117",
pages = "69--74",
booktitle = "Institute of Physics Conference Series",
edition = "117",
note = "Proceedings of the Conference on Microscopy of Semiconducting Materials 1991 ; Conference date: 25-03-1991 Through 28-03-1991",
}