STEM EDS X-ray mapping, TEM and HREM studies of the effect of gas switching procedures on the chemical abruptness of interfaces in MOCVD GaInAs/InP MQW structures

N. J. Long*, A. G. Norman, A. K. Petford-Long, B. R. Butler, C. G. Cureton, G. R. Booker, E. J. Thrush

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

STEM EDS X-ray mapping, TEM and HREM studies have been performed to investigate the chemical compositional abruptness and planarity of interfaces in MOCVD GaInAs/InP MQW structures grown using different gas switching procedures. The results obtained demonstrate that STEM EDS X-ray mapping is a powerful technique for revealing directly the abruptness of interfaces in MQW structures and that the use of different gas switching procedures can have a major effect on both the abruptness and planarity of interfaces in MOCVD GaInAs/InP MQW structures.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Inst of Physics Publ Ltd
Pages69-74
Number of pages6
Edition117
ISBN (Print)0854984062
StatePublished - Dec 1 1991
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: Mar 25 1991Mar 28 1991

Other

OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period3/25/913/28/91

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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