Strain-controlled band engineering and self-doping in ultrathin LaNiO 3 films

E. J. Moon*, J. M. Rondinelli, N. Prasai, B. A. Gray, M. Kareev, J. Chakhalian, J. L. Cohn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultrathin metallic LaNiO 3 films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the evolution of the transport coefficients is strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in transport properties arise from changes in the low-energy electronic band structure that induce self-doping, a transfer of charge between O p and Ni d states. The results suggest that thin-film epitaxy can serve as a means to vary the charge-carrier concentration in other (negative) charge-transfer gap transition-metal oxides without resorting to chemical substitution.

Original languageEnglish (US)
Article number121106
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
StatePublished - Mar 30 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Strain-controlled band engineering and self-doping in ultrathin LaNiO 3 films'. Together they form a unique fingerprint.

Cite this