Abstract
InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half- maximum of 6-11 meV were obtained for the quantum well structures with well thicknesses of 0.35-0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 628-630 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 63 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1993 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)