Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy

L. Q. Qian*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half- maximum of 6-11 meV were obtained for the quantum well structures with well thicknesses of 0.35-0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth.

Original languageEnglish (US)
Pages (from-to)628-630
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number5
DOIs
StatePublished - Dec 1 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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