Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra

C. Bayram; Manijeh Razeghi

doi:10.1007/s00339-009-5186-2

Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra

C. Bayram, Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D-3D growth mode transition through Stranski-Krastanov mode was observed via atomic force microscopy. The critical thickness for In_0.67Ga_0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examined. The capping of InGaN QDs with GaN was analyzed. Optimized InGaN quantum dots emitted in green spectra at room temperature.

Original language	English (US)
Pages (from-to)	403-408
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	96
Issue number	2
DOIs	https://doi.org/10.1007/s00339-009-5186-2
State	Published - Aug 1 2009

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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10.1007/s00339-009-5186-2

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title = "Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra",

abstract = "Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D-3D growth mode transition through Stranski-Krastanov mode was observed via atomic force microscopy. The critical thickness for In0.67Ga0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examined. The capping of InGaN QDs with GaN was analyzed. Optimized InGaN quantum dots emitted in green spectra at room temperature.",

author = "C. Bayram and Manijeh Razeghi",

year = "2009",

month = aug,

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doi = "10.1007/s00339-009-5186-2",

language = "English (US)",

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journal = "Applied Physics",

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AU - Razeghi, Manijeh

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N2 - Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D-3D growth mode transition through Stranski-Krastanov mode was observed via atomic force microscopy. The critical thickness for In0.67Ga0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examined. The capping of InGaN QDs with GaN was analyzed. Optimized InGaN quantum dots emitted in green spectra at room temperature.

AB - Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D-3D growth mode transition through Stranski-Krastanov mode was observed via atomic force microscopy. The critical thickness for In0.67Ga0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examined. The capping of InGaN QDs with GaN was analyzed. Optimized InGaN quantum dots emitted in green spectra at room temperature.

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JO - Applied Physics

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Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra

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