Stress relaxation in AlCu thin films

C. J. Shute*, J. B. Cohen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The activation energy residual stress relaxation in Al2wt.%Cu thin films on silicon was determined to be 0.87 eV by measuring the stress as a function of time in the temperature range 373-523 K. This value is approximately that for grain boundary diffusion. The stress in the films at the relaxation temperatures is shown to be compressive and in excess of the yield strength for the highest relaxation temperatures. Dislocation processes are therefore thought to contribute to the relaxation above 448 K.

Original languageEnglish (US)
Pages (from-to)167-172
Number of pages6
JournalMaterials Science and Engineering A
Volume149
Issue number2
DOIs
StatePublished - Jan 30 1992

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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