Abstract
The activation energy residual stress relaxation in Al2wt.%Cu thin films on silicon was determined to be 0.87 eV by measuring the stress as a function of time in the temperature range 373-523 K. This value is approximately that for grain boundary diffusion. The stress in the films at the relaxation temperatures is shown to be compressive and in excess of the yield strength for the highest relaxation temperatures. Dislocation processes are therefore thought to contribute to the relaxation above 448 K.
Original language | English (US) |
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Pages (from-to) | 167-172 |
Number of pages | 6 |
Journal | Materials Science and Engineering A |
Volume | 149 |
Issue number | 2 |
DOIs | |
State | Published - Jan 30 1992 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering