Stress relaxation in AlCu thin films

C. J. Shute; J. B. Cohen

doi:10.1016/0921-5093(92)90377-D

Stress relaxation in AlCu thin films

C. J. Shute^*, J. B. Cohen

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The activation energy residual stress relaxation in Al2wt.%Cu thin films on silicon was determined to be 0.87 eV by measuring the stress as a function of time in the temperature range 373-523 K. This value is approximately that for grain boundary diffusion. The stress in the films at the relaxation temperatures is shown to be compressive and in excess of the yield strength for the highest relaxation temperatures. Dislocation processes are therefore thought to contribute to the relaxation above 448 K.

Original language	English (US)
Pages (from-to)	167-172
Number of pages	6
Journal	Materials Science and Engineering A
Volume	149
Issue number	2
DOIs	https://doi.org/10.1016/0921-5093(92)90377-D
State	Published - Jan 30 1992

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

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title = "Stress relaxation in AlCu thin films",

abstract = "The activation energy residual stress relaxation in Al2wt.%Cu thin films on silicon was determined to be 0.87 eV by measuring the stress as a function of time in the temperature range 373-523 K. This value is approximately that for grain boundary diffusion. The stress in the films at the relaxation temperatures is shown to be compressive and in excess of the yield strength for the highest relaxation temperatures. Dislocation processes are therefore thought to contribute to the relaxation above 448 K.",

author = "Shute, {C. J.} and Cohen, {J. B.}",

note = "Funding Information: Fundingf or this researchh asb eenp rovidedb y IBM Corporation.T he authors would like to thank Dr. DexterJ eannottea t IBM, HopewellJ unction,f or providing samplesa nd for helpful discussionsT.h is work madeu seof the X-ray DiffractionF acilitys upporteidn part by the National Science Foundation through NorthwesternU niversity Materials Center Grant DMR 8821571T. his researchis a portion of a thesis submittedb y C. Shute in partial fulfillment of the requirementfso r a Ph.D. degree at Northwestern University.",

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doi = "10.1016/0921-5093(92)90377-D",

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PY - 1992/1/30

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N2 - The activation energy residual stress relaxation in Al2wt.%Cu thin films on silicon was determined to be 0.87 eV by measuring the stress as a function of time in the temperature range 373-523 K. This value is approximately that for grain boundary diffusion. The stress in the films at the relaxation temperatures is shown to be compressive and in excess of the yield strength for the highest relaxation temperatures. Dislocation processes are therefore thought to contribute to the relaxation above 448 K.

AB - The activation energy residual stress relaxation in Al2wt.%Cu thin films on silicon was determined to be 0.87 eV by measuring the stress as a function of time in the temperature range 373-523 K. This value is approximately that for grain boundary diffusion. The stress in the films at the relaxation temperatures is shown to be compressive and in excess of the yield strength for the highest relaxation temperatures. Dislocation processes are therefore thought to contribute to the relaxation above 448 K.

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Stress relaxation in AlCu thin films

Abstract

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