Abstract
The activation energy residual stress relaxation in Al2wt.%Cu thin films on silicon was determined to be 0.87 eV by measuring the stress as a function of time in the temperature range 373-523 K. This value is approximately that for grain boundary diffusion. The stress in the films at the relaxation temperatures is shown to be compressive and in excess of the yield strength for the highest relaxation temperatures. Dislocation processes are therefore thought to contribute to the relaxation above 448 K.
Original language | English (US) |
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Pages (from-to) | 167-172 |
Number of pages | 6 |
Journal | Materials Science and Engineering A |
Volume | 149 |
Issue number | 2 |
DOIs | |
State | Published - Jan 30 1992 |
Externally published | Yes |
Funding
Fundingf or this researchh asb eenp rovidedb y IBM Corporation.T he authors would like to thank Dr. DexterJ eannottea t IBM, HopewellJ unction,f or providing samplesa nd for helpful discussionsT.h is work madeu seof the X-ray DiffractionF acilitys upporteidn part by the National Science Foundation through NorthwesternU niversity Materials Center Grant DMR 8821571T. his researchis a portion of a thesis submittedb y C. Shute in partial fulfillment of the requirementfso r a Ph.D. degree at Northwestern University.
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering