By combining the selective deposition of tungsten on silicon with micromatching techniques, several microelectronic devices have been developed. These include ultrathin tungsten strings with cross sections ranging from 300 angstrom multiplied by 300 angstrom to 600 angstrom multiplied by 2000 angstrom, tungsten loops, and tungsten-cladded pyramids. The fabrication of these structures is described, and their applications are indicated.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|State||Published - Dec 1 1987|
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