TY - JOUR
T1 - Strong spin-orbit coupling and magnetism in (111) (La0.3Sr0.7)(Al0.65Ta0.35) O3/SrTiO3
AU - Bal, V. V.
AU - Huang, Z.
AU - Han, K.
AU - Ariando,
AU - Venkatesan, T.
AU - Chandrasekhar, V.
N1 - Funding Information:
The U.S. Department of Energy, Office of Basic Energy Sciences supported the work at Northwestern University through Grant No. DE-FG02-06ER46346. Work at NUS was supported by the MOE Tier 1 (Grants No. R-144-000-364-112 and No. R-144-000-391-114) and Singapore National Research Foundation (NRF) under the Competitive Research Programs (CRP Award No. NRF-CRP15-2015-01). This work utilized Northwestern University Micro/Nano Fabrication Facility (NUFAB), which is supported by the State of Illinois and Northwestern University.
Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/8/7
Y1 - 2018/8/7
N2 - Two-dimensional conducting interfaces in SrTiO3-based heterostructures display a variety of coexisting and competing physical phenomena, which can be tuned by the application of a gate voltage. (111) oriented heterostructures have recently gained attention due to the possibility of finding exotic physics in these systems due to their hexagonal surface crystal symmetry. In this work, we use magnetoresistance to study the evolution of spin-orbit interaction and magnetism in (111) oriented (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3. At more positive values of the gate voltage, which correspond to high carrier densities, we find that transport is multiband, and dominated by high-mobility carriers with a tendency toward weak localization. At more negative gate voltages, the carrier density is reduced, the high-mobility bands are depopulated, and weak antilocalization effects begin to dominate, indicating that spin-orbit interaction becomes stronger. At millikelvin temperatures, at gate voltages corresponding to the strong spin-orbit regime, we observe hysteresis in magnetoresistance, indicative of ferromagnetism in the system. Our results suggest that in the (111) (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 system, low-mobility carriers that experience strong spin-orbit interactions participate in creating magnetic order in the system.
AB - Two-dimensional conducting interfaces in SrTiO3-based heterostructures display a variety of coexisting and competing physical phenomena, which can be tuned by the application of a gate voltage. (111) oriented heterostructures have recently gained attention due to the possibility of finding exotic physics in these systems due to their hexagonal surface crystal symmetry. In this work, we use magnetoresistance to study the evolution of spin-orbit interaction and magnetism in (111) oriented (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3. At more positive values of the gate voltage, which correspond to high carrier densities, we find that transport is multiband, and dominated by high-mobility carriers with a tendency toward weak localization. At more negative gate voltages, the carrier density is reduced, the high-mobility bands are depopulated, and weak antilocalization effects begin to dominate, indicating that spin-orbit interaction becomes stronger. At millikelvin temperatures, at gate voltages corresponding to the strong spin-orbit regime, we observe hysteresis in magnetoresistance, indicative of ferromagnetism in the system. Our results suggest that in the (111) (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 system, low-mobility carriers that experience strong spin-orbit interactions participate in creating magnetic order in the system.
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U2 - 10.1103/PhysRevB.98.085416
DO - 10.1103/PhysRevB.98.085416
M3 - Article
AN - SCOPUS:85051543368
SN - 0163-1829
VL - 98
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 8
M1 - 085416
ER -