Structural and electronic properties of the Sn/Si(111)√3X √3R30° surface

G. Profeta*, A. Continenza, L. Ottaviano, W. Mannstadt, A. J. Freeman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The structural and electronic properties of the Sn/Si(111)√3×√3 surface are determined by means of all-electron local density full-potential augmented plane wave thin film calculations. We find strong similarities with the more extensively studied isolectronic systems (Sn/Ge and Pb/Ge) as far as the relaxed structure and the electronic properties are concerned. In analogy with these systems, we find, within the local density approximation (LDA), two surface states weakly dispersed in the Brillouin zone which are responsible for the hexagonal patterns observed in scanning tunneling microscopy (STM) experiments. When our calculated results including STM images, are compared with available structural data and STM images, we find that the LDA predictions well reproduce the electron distribution at the surface and the structural properties, leading to a complete description of this system at room temperature.

Original languageEnglish
Pages (from-to)1556-1559
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number3
StatePublished - 2000

ASJC Scopus subject areas

  • Condensed Matter Physics

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