Structural and magnetic properties of ferromagnetic In1-xMnxAs1-yPy layers

N. D. Parashar; P. T. Chiu; B. W. Wessels

doi:10.1016/j.jmmm.2008.10.024

Structural and magnetic properties of ferromagnetic In_1-xMn_xAs_1-yP_y layers

N. D. Parashar, P. T. Chiu, B. W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The structural and magnetic properties of epitaxial In_1-xMn_xAs_1-yP_y quaternary layers with Mn content ranging from 0.01 to 0.04 and phosphorous content ranging from 0.11 to 0.21 were studied. X-ray diffraction indicated that the films were two phase consisting of an InMnAsP solid solution and hexagonal MnAs nanoprecipitates. Addition of phosphorus promoted precipitate formation. Films were ferromagnetic showing hysteretic behavior in the field dependence of magnetization at 5 and 298 K. From field-cooled magnetization measurements ferromagnetic transitions were observed at 280 and 325 K. The zero field-cooled magnetization versus temperature measurements showed irreversibility for T<300 K that was attributed to the presence of MnAs nanoprecipitates. The calculated coercivity using the Neel model was 1380 G compared to the experimental value of 380 G at 5 K. The difference was attributed to a strong inter-cluster exchange that stabilizes the ferromagnetic state.

Original language	English (US)
Pages (from-to)	1058-1062
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	321
Issue number	8
DOIs	https://doi.org/10.1016/j.jmmm.2008.10.024
State	Published - Apr 2009

Funding

This work is supported by the NSF under Grant DMR-0511523. EDS analysis in this work was performed in the EPIC facility of the NUANCE Center at Northwestern University, supported by NSF-NSEC, NSF-MRSEC, KECK Foundation, State of Illinois and Northwestern University.

Keywords

Epitaxial
Ferromagnetic semiconductor
InMnAsP

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2008.10.024

Cite this

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title = "Structural and magnetic properties of ferromagnetic In1-xMnxAs1-yPy layers",

abstract = "The structural and magnetic properties of epitaxial In1-xMnxAs1-yPy quaternary layers with Mn content ranging from 0.01 to 0.04 and phosphorous content ranging from 0.11 to 0.21 were studied. X-ray diffraction indicated that the films were two phase consisting of an InMnAsP solid solution and hexagonal MnAs nanoprecipitates. Addition of phosphorus promoted precipitate formation. Films were ferromagnetic showing hysteretic behavior in the field dependence of magnetization at 5 and 298 K. From field-cooled magnetization measurements ferromagnetic transitions were observed at 280 and 325 K. The zero field-cooled magnetization versus temperature measurements showed irreversibility for T<300 K that was attributed to the presence of MnAs nanoprecipitates. The calculated coercivity using the Neel model was 1380 G compared to the experimental value of 380 G at 5 K. The difference was attributed to a strong inter-cluster exchange that stabilizes the ferromagnetic state.",

keywords = "Epitaxial, Ferromagnetic semiconductor, InMnAsP",

author = "Parashar, {N. D.} and Chiu, {P. T.} and Wessels, {B. W.}",

note = "Funding Information: This work is supported by the NSF under Grant DMR-0511523. EDS analysis in this work was performed in the EPIC facility of the NUANCE Center at Northwestern University, supported by NSF-NSEC, NSF-MRSEC, KECK Foundation, State of Illinois and Northwestern University. ",

year = "2009",

month = apr,

doi = "10.1016/j.jmmm.2008.10.024",

language = "English (US)",

volume = "321",

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AU - Parashar, N. D.

AU - Chiu, P. T.

AU - Wessels, B. W.

N1 - Funding Information: This work is supported by the NSF under Grant DMR-0511523. EDS analysis in this work was performed in the EPIC facility of the NUANCE Center at Northwestern University, supported by NSF-NSEC, NSF-MRSEC, KECK Foundation, State of Illinois and Northwestern University.

PY - 2009/4

Y1 - 2009/4

N2 - The structural and magnetic properties of epitaxial In1-xMnxAs1-yPy quaternary layers with Mn content ranging from 0.01 to 0.04 and phosphorous content ranging from 0.11 to 0.21 were studied. X-ray diffraction indicated that the films were two phase consisting of an InMnAsP solid solution and hexagonal MnAs nanoprecipitates. Addition of phosphorus promoted precipitate formation. Films were ferromagnetic showing hysteretic behavior in the field dependence of magnetization at 5 and 298 K. From field-cooled magnetization measurements ferromagnetic transitions were observed at 280 and 325 K. The zero field-cooled magnetization versus temperature measurements showed irreversibility for T<300 K that was attributed to the presence of MnAs nanoprecipitates. The calculated coercivity using the Neel model was 1380 G compared to the experimental value of 380 G at 5 K. The difference was attributed to a strong inter-cluster exchange that stabilizes the ferromagnetic state.

AB - The structural and magnetic properties of epitaxial In1-xMnxAs1-yPy quaternary layers with Mn content ranging from 0.01 to 0.04 and phosphorous content ranging from 0.11 to 0.21 were studied. X-ray diffraction indicated that the films were two phase consisting of an InMnAsP solid solution and hexagonal MnAs nanoprecipitates. Addition of phosphorus promoted precipitate formation. Films were ferromagnetic showing hysteretic behavior in the field dependence of magnetization at 5 and 298 K. From field-cooled magnetization measurements ferromagnetic transitions were observed at 280 and 325 K. The zero field-cooled magnetization versus temperature measurements showed irreversibility for T<300 K that was attributed to the presence of MnAs nanoprecipitates. The calculated coercivity using the Neel model was 1380 G compared to the experimental value of 380 G at 5 K. The difference was attributed to a strong inter-cluster exchange that stabilizes the ferromagnetic state.

KW - Epitaxial

KW - Ferromagnetic semiconductor

KW - InMnAsP

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