Structural and Optical Properties of Highly Strained InAsxP1-x/InP Heterostructures

R. P. Schneider, B. W. Wessels

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

InAsx.P1-x/InP strained-layer heterostructures with a wide range of compositionxwere prepared using atmospheric-pressure organometallic vapor phase epitaxy. Composition of the InAsxP1-x layers was found to depend on both the TMIn partial pressure and the state of strain of the layer. Strained-layer superlattices exhibited smooth surface morphologies and abrupt interfaces, as determined by x-ray diffraction and high-resolution electron microscopy. InAsxP1-x compositions as high asx= 0.8 were obtained, corresponding to strain between the layers of 2.6%. Strained quantum well structures with InAsxP1-x compositions as high asx= 0.67 were also grown and their structural properties were evaluated using photoluminescence (PL) spectroscopy. PL spectra indicated atomically smooth interfaces for structures with strains as high as 2.1%.

Original languageEnglish (US)
Pages (from-to)3490-3494
Number of pages5
JournalJournal of the Electrochemical Society
Volume136
Issue number11
DOIs
StatePublished - Nov 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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