Structural and Optical Properties of Highly Strained InAs_xP_1-x/InP Heterostructures

InAs_x.P₁-_x/InP strained-layer heterostructures with a wide range of compositionxwere prepared using atmospheric-pressure organometallic vapor phase epitaxy. Composition of the InAs_xP₁-_x layers was found to depend on both the TMIn partial pressure and the state of strain of the layer. Strained-layer superlattices exhibited smooth surface morphologies and abrupt interfaces, as determined by x-ray diffraction and high-resolution electron microscopy. InAs_xP₁-_x compositions as high asx= 0.8 were obtained, corresponding to strain between the layers of 2.6%. Strained quantum well structures with InAs_xP₁-_x compositions as high asx= 0.67 were also grown and their structural properties were evaluated using photoluminescence (PL) spectroscopy. PL spectra indicated atomically smooth interfaces for structures with strains as high as 2.1%.