Structural and optical properties of ZnO film by plasma-assisted MOCVD

X. Wang; S. Yang; J. Wang; M. Li; X. Jiang; G. Du; X. Liu; R. P.H. Chang

doi:10.1023/A:1019956323462

Structural and optical properties of ZnO film by plasma-assisted MOCVD

X. Wang, S. Yang, J. Wang, M. Li, X. Jiang, G. Du^*, X. Liu, R. P.H. Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

High quality ZnO film was deposited by plasma-assisted metal-organic chemical vapor deposition (MOCVD). We observed a dominant peak at 34.6° due to (0 0 2) ZnO, which indicated that the growth of ZnO film was strongly C-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.56° indicating relatively small mosaicity. Photoluminescence (PL) measurement was performed at both room temperature and low temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. From PL spectrum at 10 K, we observed A-exciton emission at 3.377 eV and D°X bound exciton transition at 3.370 eV. The donor-acceptor transition and LO phonon replicas were observed at 3.333 and 3.241 eV respectively. Raman scattering was performed in back scattering at room temperature. The E₂, A_1(LO) and A_1(TO) mode was seen at 437.6, 575.8 and 380 cm^-1 respectively. In comparison with Raman spectrum of ZnO powder, we found that ZnO film was nearly free of strain, which indicated high crystal quality.

Original language	English (US)
Pages (from-to)	883-891
Number of pages	9
Journal	Optical and Quantum Electronics
Volume	34
Issue number	9
DOIs	https://doi.org/10.1023/A:1019956323462
State	Published - Sep 2002

Keywords

Photoluminescence
Raman scattering
Ultraviolet emission
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1023/A:1019956323462

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title = "Structural and optical properties of ZnO film by plasma-assisted MOCVD",

abstract = "High quality ZnO film was deposited by plasma-assisted metal-organic chemical vapor deposition (MOCVD). We observed a dominant peak at 34.6° due to (0 0 2) ZnO, which indicated that the growth of ZnO film was strongly C-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.56° indicating relatively small mosaicity. Photoluminescence (PL) measurement was performed at both room temperature and low temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. From PL spectrum at 10 K, we observed A-exciton emission at 3.377 eV and D°X bound exciton transition at 3.370 eV. The donor-acceptor transition and LO phonon replicas were observed at 3.333 and 3.241 eV respectively. Raman scattering was performed in back scattering at room temperature. The E2, A1(LO) and A1(TO) mode was seen at 437.6, 575.8 and 380 cm-1 respectively. In comparison with Raman spectrum of ZnO powder, we found that ZnO film was nearly free of strain, which indicated high crystal quality.",

keywords = "Photoluminescence, Raman scattering, Ultraviolet emission, ZnO",

author = "X. Wang and S. Yang and J. Wang and M. Li and X. Jiang and G. Du and X. Liu and Chang, {R. P.H.}",

note = "Funding Information: This work was supported by NSFC-RGC (No. 59910161983) and Jilin Province Science Fund (No. 19990518-1).",

year = "2002",

month = sep,

doi = "10.1023/A:1019956323462",

language = "English (US)",

volume = "34",

pages = "883--891",

journal = "Optical and Quantum Electronics",

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TY - JOUR

T1 - Structural and optical properties of ZnO film by plasma-assisted MOCVD

AU - Wang, X.

AU - Yang, S.

AU - Wang, J.

AU - Li, M.

AU - Jiang, X.

AU - Du, G.

AU - Liu, X.

AU - Chang, R. P.H.

N1 - Funding Information: This work was supported by NSFC-RGC (No. 59910161983) and Jilin Province Science Fund (No. 19990518-1).

PY - 2002/9

Y1 - 2002/9

N2 - High quality ZnO film was deposited by plasma-assisted metal-organic chemical vapor deposition (MOCVD). We observed a dominant peak at 34.6° due to (0 0 2) ZnO, which indicated that the growth of ZnO film was strongly C-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.56° indicating relatively small mosaicity. Photoluminescence (PL) measurement was performed at both room temperature and low temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. From PL spectrum at 10 K, we observed A-exciton emission at 3.377 eV and D°X bound exciton transition at 3.370 eV. The donor-acceptor transition and LO phonon replicas were observed at 3.333 and 3.241 eV respectively. Raman scattering was performed in back scattering at room temperature. The E2, A1(LO) and A1(TO) mode was seen at 437.6, 575.8 and 380 cm-1 respectively. In comparison with Raman spectrum of ZnO powder, we found that ZnO film was nearly free of strain, which indicated high crystal quality.

AB - High quality ZnO film was deposited by plasma-assisted metal-organic chemical vapor deposition (MOCVD). We observed a dominant peak at 34.6° due to (0 0 2) ZnO, which indicated that the growth of ZnO film was strongly C-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.56° indicating relatively small mosaicity. Photoluminescence (PL) measurement was performed at both room temperature and low temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. From PL spectrum at 10 K, we observed A-exciton emission at 3.377 eV and D°X bound exciton transition at 3.370 eV. The donor-acceptor transition and LO phonon replicas were observed at 3.333 and 3.241 eV respectively. Raman scattering was performed in back scattering at room temperature. The E2, A1(LO) and A1(TO) mode was seen at 437.6, 575.8 and 380 cm-1 respectively. In comparison with Raman spectrum of ZnO powder, we found that ZnO film was nearly free of strain, which indicated high crystal quality.

KW - Photoluminescence

KW - Raman scattering

KW - Ultraviolet emission

KW - ZnO

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JO - Optical and Quantum Electronics

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ER -

Structural and optical properties of ZnO film by plasma-assisted MOCVD

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