Structural and thermoelectric properties of MBE-grown doped and undoped BiSb alloy thin films

Sunglae Cho*, Antonio DiVenere, Yunki Kim, George K. Wong, John B Ketterson, Jerry R. Meyer, Craig A. Hoffman

*Corresponding author for this work

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

We have successfully grown BiSb alloy thin films on CdTe(111)B over a wide range of Sb compositions using molecular beam epitaxy. it is well known that small bandgap (approximately 18 meV) bulk BiSb alloys are good n-type thermoelements at liquid nitrogen temperature. We have observed that the power factor (S 2 σ) for MBE-grown 1 μm thick BiSb thin films grown on CdTe(111) peak at a significantly higher temperature (250 K) than previous results for the bulk alloy (80 K), possibly due to an enhanced bandgap. For doping experiments we used the group IV(VI) element Sn(Te) as an acceptor(donor). Thermoelectric Power (TEP) and electrical resistivity were studied in the range of temperatures 2-300 K. Doping Sn into the BiSb system causes the TEP to change sign (from negative to positive), and the maximum value of the TEP can be controlled with the Sn dopant concentration.

Original languageEnglish (US)
Pages284-287
Number of pages4
StatePublished - Dec 1 1998
EventProceedings of the 1998 17th International Conference on Thermoelectrics, ICT - Nagoya, Jpn
Duration: May 24 1998May 28 1998

Other

OtherProceedings of the 1998 17th International Conference on Thermoelectrics, ICT
CityNagoya, Jpn
Period5/24/985/28/98

ASJC Scopus subject areas

  • Engineering(all)

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    Cho, S., DiVenere, A., Kim, Y., Wong, G. K., Ketterson, J. B., Meyer, J. R., & Hoffman, C. A. (1998). Structural and thermoelectric properties of MBE-grown doped and undoped BiSb alloy thin films. 284-287. Paper presented at Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT, Nagoya, Jpn, .