Structural and thermoelectric properties of MBE-grown doped and undoped BiSb alloy thin films

Sunglae Cho; Antonio DiVenere; Yunki Kim; George K. Wong; John B Ketterson; Jerry R. Meyer; Craig A. Hoffman

Structural and thermoelectric properties of MBE-grown doped and undoped BiSb alloy thin films

Sunglae Cho^*, Antonio DiVenere, Yunki Kim, George K. Wong, John B Ketterson, Jerry R. Meyer, Craig A. Hoffman

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

We have successfully grown BiSb alloy thin films on CdTe(111)B over a wide range of Sb compositions using molecular beam epitaxy. it is well known that small bandgap (approximately 18 meV) bulk BiSb alloys are good n-type thermoelements at liquid nitrogen temperature. We have observed that the power factor (S ² σ) for MBE-grown 1 μm thick BiSb thin films grown on CdTe(111) peak at a significantly higher temperature (250 K) than previous results for the bulk alloy (80 K), possibly due to an enhanced bandgap. For doping experiments we used the group IV(VI) element Sn(Te) as an acceptor(donor). Thermoelectric Power (TEP) and electrical resistivity were studied in the range of temperatures 2-300 K. Doping Sn into the BiSb system causes the TEP to change sign (from negative to positive), and the maximum value of the TEP can be controlled with the Sn dopant concentration.

Original language	English (US)
Pages	284-287
Number of pages	4
State	Published - Dec 1 1998
Event	Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT - Nagoya, Jpn Duration: May 24 1998 → May 28 1998

Other

Other	Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT
City	Nagoya, Jpn
Period	5/24/98 → 5/28/98

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Structural and thermoelectric properties of MBE-grown doped and undoped BiSb alloy thin films",

abstract = " We have successfully grown BiSb alloy thin films on CdTe(111)B over a wide range of Sb compositions using molecular beam epitaxy. it is well known that small bandgap (approximately 18 meV) bulk BiSb alloys are good n-type thermoelements at liquid nitrogen temperature. We have observed that the power factor (S 2 σ) for MBE-grown 1 μm thick BiSb thin films grown on CdTe(111) peak at a significantly higher temperature (250 K) than previous results for the bulk alloy (80 K), possibly due to an enhanced bandgap. For doping experiments we used the group IV(VI) element Sn(Te) as an acceptor(donor). Thermoelectric Power (TEP) and electrical resistivity were studied in the range of temperatures 2-300 K. Doping Sn into the BiSb system causes the TEP to change sign (from negative to positive), and the maximum value of the TEP can be controlled with the Sn dopant concentration. ",

author = "Sunglae Cho and Antonio DiVenere and Yunki Kim and Wong, {George K.} and Ketterson, {John B} and Meyer, {Jerry R.} and Hoffman, {Craig A.}",

year = "1998",

month = dec,

day = "1",

language = "English (US)",

pages = "284--287",

note = "Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT ; Conference date: 24-05-1998 Through 28-05-1998",

}

TY - CONF

T1 - Structural and thermoelectric properties of MBE-grown doped and undoped BiSb alloy thin films

AU - Cho, Sunglae

AU - DiVenere, Antonio

AU - Kim, Yunki

AU - Wong, George K.

AU - Ketterson, John B

AU - Meyer, Jerry R.

AU - Hoffman, Craig A.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have successfully grown BiSb alloy thin films on CdTe(111)B over a wide range of Sb compositions using molecular beam epitaxy. it is well known that small bandgap (approximately 18 meV) bulk BiSb alloys are good n-type thermoelements at liquid nitrogen temperature. We have observed that the power factor (S 2 σ) for MBE-grown 1 μm thick BiSb thin films grown on CdTe(111) peak at a significantly higher temperature (250 K) than previous results for the bulk alloy (80 K), possibly due to an enhanced bandgap. For doping experiments we used the group IV(VI) element Sn(Te) as an acceptor(donor). Thermoelectric Power (TEP) and electrical resistivity were studied in the range of temperatures 2-300 K. Doping Sn into the BiSb system causes the TEP to change sign (from negative to positive), and the maximum value of the TEP can be controlled with the Sn dopant concentration.

AB - We have successfully grown BiSb alloy thin films on CdTe(111)B over a wide range of Sb compositions using molecular beam epitaxy. it is well known that small bandgap (approximately 18 meV) bulk BiSb alloys are good n-type thermoelements at liquid nitrogen temperature. We have observed that the power factor (S 2 σ) for MBE-grown 1 μm thick BiSb thin films grown on CdTe(111) peak at a significantly higher temperature (250 K) than previous results for the bulk alloy (80 K), possibly due to an enhanced bandgap. For doping experiments we used the group IV(VI) element Sn(Te) as an acceptor(donor). Thermoelectric Power (TEP) and electrical resistivity were studied in the range of temperatures 2-300 K. Doping Sn into the BiSb system causes the TEP to change sign (from negative to positive), and the maximum value of the TEP can be controlled with the Sn dopant concentration.

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M3 - Paper

AN - SCOPUS:0032304577

SP - 284

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T2 - Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT

Y2 - 24 May 1998 through 28 May 1998

ER -

Structural and thermoelectric properties of MBE-grown doped and undoped BiSb alloy thin films

Abstract

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