Structural and thermoelectric transport properties of Sb 2Te 3 thin films grown by molecular beam epitaxy

Yunki Kim; Antonio Divenere; George K.L. Wong; J. B. Ketterson; Sunglae Cho; Jerry R. Meyer

doi:10.1063/1.1424056

Structural and thermoelectric transport properties of Sb ₂Te ₃ thin films grown by molecular beam epitaxy

Yunki Kim^*, Antonio Divenere, George K.L. Wong, J. B. Ketterson, Sunglae Cho, Jerry R. Meyer

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

104 Scopus citations

Abstract

We have studied the structural and transport properties of Sb ₂Te ₃ thin films prepared by molecular beam epitaxy as a function of the Te/Sb flux ratio during deposition. Both the crystallinity and the transport properties are found to be strongly affected by nonstoichiometry. The most stoichiometric sample (prepared with a Te/Sb ratio of 3.6) had a high degree of crystallinity, high thermopower, and high carrier mobility. However, Sb ₂Te ₃ films with excess Sb or Te had poorer crystallinity, reduced magnitude of the thermopower, and reduced mobility as a result of the formation of antisite defects. These antisite defects were able to be reduced by controlling the relative flow rate ratio of Te to Sb during growth.

Original language	English (US)
Pages (from-to)	715-718
Number of pages	4
Journal	Journal of Applied Physics
Volume	91
Issue number	2
DOIs	https://doi.org/10.1063/1.1424056
State	Published - Jan 15 2002

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Structural and thermoelectric transport properties of Sb 2Te 3 thin films grown by molecular beam epitaxy",

abstract = "We have studied the structural and transport properties of Sb 2Te 3 thin films prepared by molecular beam epitaxy as a function of the Te/Sb flux ratio during deposition. Both the crystallinity and the transport properties are found to be strongly affected by nonstoichiometry. The most stoichiometric sample (prepared with a Te/Sb ratio of 3.6) had a high degree of crystallinity, high thermopower, and high carrier mobility. However, Sb 2Te 3 films with excess Sb or Te had poorer crystallinity, reduced magnitude of the thermopower, and reduced mobility as a result of the formation of antisite defects. These antisite defects were able to be reduced by controlling the relative flow rate ratio of Te to Sb during growth.",

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T1 - Structural and thermoelectric transport properties of Sb 2Te 3 thin films grown by molecular beam epitaxy

AU - Kim, Yunki

AU - Divenere, Antonio

AU - Wong, George K.L.

AU - Ketterson, J. B.

AU - Cho, Sunglae

AU - Meyer, Jerry R.

PY - 2002/1/15

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N2 - We have studied the structural and transport properties of Sb 2Te 3 thin films prepared by molecular beam epitaxy as a function of the Te/Sb flux ratio during deposition. Both the crystallinity and the transport properties are found to be strongly affected by nonstoichiometry. The most stoichiometric sample (prepared with a Te/Sb ratio of 3.6) had a high degree of crystallinity, high thermopower, and high carrier mobility. However, Sb 2Te 3 films with excess Sb or Te had poorer crystallinity, reduced magnitude of the thermopower, and reduced mobility as a result of the formation of antisite defects. These antisite defects were able to be reduced by controlling the relative flow rate ratio of Te to Sb during growth.

AB - We have studied the structural and transport properties of Sb 2Te 3 thin films prepared by molecular beam epitaxy as a function of the Te/Sb flux ratio during deposition. Both the crystallinity and the transport properties are found to be strongly affected by nonstoichiometry. The most stoichiometric sample (prepared with a Te/Sb ratio of 3.6) had a high degree of crystallinity, high thermopower, and high carrier mobility. However, Sb 2Te 3 films with excess Sb or Te had poorer crystallinity, reduced magnitude of the thermopower, and reduced mobility as a result of the formation of antisite defects. These antisite defects were able to be reduced by controlling the relative flow rate ratio of Te to Sb during growth.

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Structural and thermoelectric transport properties of Sb ₂Te ₃ thin films grown by molecular beam epitaxy

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