Structural and thermoelectric transport properties of Sb 2Te 3 thin films grown by molecular beam epitaxy

Yunki Kim*, Antonio Divenere, George K.L. Wong, J. B. Ketterson, Sunglae Cho, Jerry R. Meyer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

95 Scopus citations

Abstract

We have studied the structural and transport properties of Sb 2Te 3 thin films prepared by molecular beam epitaxy as a function of the Te/Sb flux ratio during deposition. Both the crystallinity and the transport properties are found to be strongly affected by nonstoichiometry. The most stoichiometric sample (prepared with a Te/Sb ratio of 3.6) had a high degree of crystallinity, high thermopower, and high carrier mobility. However, Sb 2Te 3 films with excess Sb or Te had poorer crystallinity, reduced magnitude of the thermopower, and reduced mobility as a result of the formation of antisite defects. These antisite defects were able to be reduced by controlling the relative flow rate ratio of Te to Sb during growth.

Original languageEnglish (US)
Pages (from-to)715-718
Number of pages4
JournalJournal of Applied Physics
Volume91
Issue number2
DOIs
StatePublished - Jan 15 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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